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JSMSEMI STD30NE06LT4-JSM product image
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JSMSEMI STD30NE06LT4-JSM

Manufacturer
JSMSEMIAsian Brands
MPN
STD30NE06LT4-JSM
LCSC Part #
C18193184
Packaging
TO-252
Customer #
Key Attributes
60V 30A 40W 30mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS
DatasheetJSMSEMI STD30NE06LT4-JSM
RoHS Compliance6 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingTO-252
Drain to Source Voltage60V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)30A
Ciss-Input Capacitance1.7nF
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss)65pF
RDS(on)30mΩ@10V
Number1 N-channel
Gate Charge(Qg)20nC@30V
Gate Threshold Voltage (Vgs(th))2.5V
TypeN-Channel
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Introduction

AI Translation

This N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 60V, drain current (ID) = 30A, on-resistance (RDS(ON)) < 30mΩ at gate-source voltage (VGS) = 10V
  • Low gate charge
  • RoHS-compliant devices available
  • Ultra-low RDS(ON) achieved with advanced high cell density trench technology
  • Excellent thermal dissipation in package