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JSMSEMI IRF7240TRPBF-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | IRF7240TRPBF-JSM |
| LCSC Part # | C18190856 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 40V 12A SOP-8 |
| Datasheet | JSMSEMI IRF7240TRPBF-JSM |
| RoHS Compliance | 6 documents available |
| Alternative Parts | 2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 288pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.799nF | |
| Gate Charge(Qg) | 41nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 288pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.799nF | |
| Gate Charge(Qg) | 41nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS=-40V, ID=-12A, RDS(ON)<13mΩ@VGS=-10V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra Iow RDS(ON).
- Excellent package for good heat dissipation.
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In-Stock: 2,473
2,473 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.2557$ 0.2430 | $ 0.24 |
| 10+ | $ 0.2215$ 0.2105 | $ 2.11 |
| 30+ | $ 0.2069$ 0.1966 | $ 5.90 |
| 100+ | $ 0.1873$ 0.1780 | $ 17.80 |
| 500+ | $ 0.1792$ 0.1703 | $ 85.15 |
| 1,000+ | $ 0.1743$ 0.1656 | $ 165.60 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 288pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.799nF | |
| Gate Charge(Qg) | 41nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 288pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.799nF | |
| Gate Charge(Qg) | 41nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS=-40V, ID=-12A, RDS(ON)<13mΩ@VGS=-10V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra Iow RDS(ON).
- Excellent package for good heat dissipation.
C18190856 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FDS4675-NL-JSM | JSMSEMI | SOP-8 | 3,138 | $0.3924 $0.413 | ||
| AO4485 | JSMSEMI | SOP-8 | 3,840 | $0.1817 $0.1912 |