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JSMSEMI APM4010NUC-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | APM4010NUC-JSM |
| LCSC Part # | C18190484 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 40V 60A 2.5V 47W 7mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS |
| Datasheet | JSMSEMI APM4010NUC-JSM |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 47W | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.38nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 47W | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.38nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
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Introduction
AI Translation
This N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = 40 V, drain current (ID) = 60 A, on-resistance (RDS(ON)) < 7 mΩ at gate-source voltage (VGS) = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package with superior thermal dissipation performance
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.5675 | $ 0.57 |
| 200+ | $ 0.2276 | $ 45.52 |
| 500+ | $ 0.22 | $ 110.00 |
| 1,000+ | $ 0.2155 | $ 215.50 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 47W | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.38nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 47W | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.38nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = 40 V, drain current (ID) = 60 A, on-resistance (RDS(ON)) < 7 mΩ at gate-source voltage (VGS) = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package with superior thermal dissipation performance
C18190484 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| KMB035N40DB | JSMSEMI | TO-252 | 160 | $0.3191 $0.3358 | ||
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| IPD90N06S4L-06-JSM | JSMSEMI | TO-252 | 495 | $ 0.7691 | ||
| DMTH6005LK3Q-13-JSM | JSMSEMI | TO-252 | 2,590 | $ 0.5779 | ||
| IRFR7540TRPBF-JSM | JSMSEMI | TO-252 | 500 | $ 0.4856 | ||
| JSM100N06D | JSMSEMI | TO-252 | 1,245 | $ 0.2138 | ||
| AOD4186-JSM | JSMSEMI | TO-252 | 2,460 | $ 0.3702 | ||
| STD90N4F3-JSM | JSMSEMI | TO-252 | 0 | $ 0.5675 | ||
| FDD8447L-JSM | JSMSEMI | TO-252 | 0 | $ 0.5675 | ||
| IRFR3504ZTRPBF-JSM | JSMSEMI | TO-252 | 0 | $ 0.5675 |