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EDA ModelsEasyEDA
JSMSEMI AP9997GH-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | AP9997GH-JSM |
| LCSC Part # | C18190456 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 100V 15A 50W 100mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS |
| Datasheet | JSMSEMI AP9997GH-JSM |
| RoHS Compliance | 6 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 15A | |
| Pd - Power Dissipation | 50W | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 15A |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 50W | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = 100 V, drain current (ID) = 15 A, on-resistance (RDS(ON)) < 100 mΩ at gate-source voltage (VGS) = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package with superior thermal dissipation
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 15A | |
| Pd - Power Dissipation | 50W | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 15A |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 50W | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = 100 V, drain current (ID) = 15 A, on-resistance (RDS(ON)) < 100 mΩ at gate-source voltage (VGS) = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package with superior thermal dissipation
C18190456 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |