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JSMSEMI AO3401A-JSM product image
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JSMSEMI AO3401A-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
AO3401A-JSM
LCSC Part #
C18189250
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 30V 4.3A SOT-23
Datasheetpdf iconJSMSEMI AO3401A-JSM
In-Stock: 3,580
3,580 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0305$ 0.61
200+$ 0.0238$ 4.76
600+$ 0.02$ 12.00
3,000+$ 0.0178$ 53.40
9,000+$ 0.0158$ 142.20
21,000+$ 0.0148$ 310.80
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOT-23
Operating Temperature-55℃~+150℃
Drain to Source Voltage30V
Output Capacitance(Coss)280pF
Current - Continuous Drain(Id)4.3A
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.5W
RDS(on)78mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)102pF
Number1 P-Channel
Input Capacitance(Ciss)672pF
Gate Charge(Qg)6.2nC@4.5V
TypeP-Channel
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Introduction

AI Translation

The AO3401A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application，and low in-line power loss are needed in a very small outline surface mount package.

Features

AI Translation
  • -30V/-4.3A, RDs(0N)=44mΩ (typ.)@VGs=-10V
  • -30V/-3.5A, RDs(0N)=50mΩ (typ.)@VGs=-4.5V
  • -30V/-2.5A, RDS(ON)=65mΩ (typ.)@VGs=-2.5V
  • Super high design for extremely low RDs(ON)
  • Exceptional on-resistance and Maximum DC current capability
  • Full RoHS compliance
  • SOT23-3 package design

Applications

AI Translation
  • PowerManagement
  • Portable Equipment
  • DC/DC Converter
  • Load Switch
  • DSC
  • LCD Display inverter