TT Electronics/Optek Technology 2N5796U
| Manufacturer | |
| MPN | 2N5796U |
| LCSC Part # | C17677922 |
| Packaging | CLCC-6 |
| Customer # | |
| Key Attributes | 60V 100 600mA 2 PNP PNP CLCC-6 Single Bipolar Transistors |
| Datasheet | TT Electronics/Optek Technology 2N5796U |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | TT Electronics/Optek Technology | |
| Packaging | CLCC-6 | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+200℃ | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 600mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 2 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 1.6V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | TT Electronics/Optek Technology | |
| Packaging | CLCC-6 | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+200℃ | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 600mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 2 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 1.6V |
Introduction
2N5796U (TX, TXV - Discontinued) is a hermetic ceramic surface-mount device consisting of two independent silicon PNP transistors. The six-lead ceramic package is ideally suited for designs where board space and device weight are critical design considerations. Typical screening and lot acceptance testing is performed in accordance with MIL-PRF-19500/496. Burn-in conditions are V_CB = 30 V, P_D = 300 mW per transistor, and ambient temperature T_A = 25℃. Refer to MIL-PRF-19500/496 for complete requirements. Do not use the TX or TXV suffix when ordering unprocessed parts.
Features
- Ceramic 6-pin surface mount package
- Small package to minimize board area
- Hermetic package
- Electrical performance similar to dual 2N2907A
- Processed in accordance with MIL-PRF-19500/496
Applications
General-purpose switching, amplification, signal processing, radio transmission, logic gates
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 64.9868 | $ 64.99 |
| 210+ | $ 25.9312 | $ 5445.55 |
| 510+ | $ 25.0634 | $ 12782.33 |
| 990+ | $ 24.6356 | $ 24389.24 |
Standard Packaging30/Full Bag | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | TT Electronics/Optek Technology | |
| Packaging | CLCC-6 | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+200℃ | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 600mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 2 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 1.6V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | TT Electronics/Optek Technology | |
| Packaging | CLCC-6 | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+200℃ | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 600mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 2 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 1.6V |
Introduction
2N5796U (TX, TXV - Discontinued) is a hermetic ceramic surface-mount device consisting of two independent silicon PNP transistors. The six-lead ceramic package is ideally suited for designs where board space and device weight are critical design considerations. Typical screening and lot acceptance testing is performed in accordance with MIL-PRF-19500/496. Burn-in conditions are V_CB = 30 V, P_D = 300 mW per transistor, and ambient temperature T_A = 25℃. Refer to MIL-PRF-19500/496 for complete requirements. Do not use the TX or TXV suffix when ordering unprocessed parts.
Features
- Ceramic 6-pin surface mount package
- Small package to minimize board area
- Hermetic package
- Electrical performance similar to dual 2N2907A
- Processed in accordance with MIL-PRF-19500/496
Applications
General-purpose switching, amplification, signal processing, radio transmission, logic gates
C17677922 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

