Winbond W9864G6JB-6 TR

W9864G6JB is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x16 bits. W9864G6JB delivers a data bandwidth of up to 166M words per second. For different application, W9864G6JB is sorted into the following speed grades: -6/-6I/-6A and -7. The -6 and -6I is compliant to the 166MHz/CL3 specification (the -6I industrial grade, -6A automotive grade which is guaranteed to support -40℃ ~ 85℃). The -7 parts can run up to 143MHz/CL3 and with tan = 18nS. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9864G6JB is ideal for main memory in high performance applications.

• 3.3V ± 0.3V for -6/-6I/-6A speed grades power supply
• 2.7V ~ 3.6V for -7 speed grade power supply
• Up to 166 MHz Clock Frequency
• 1,048,576 Words x 4 banks x16 bits organization
• Self Refresh Mode CAS Latency: 2 and 3
• Burst Length: 1, 2, 4, 8 and full page
• Burst Read, Single Writes Mode
• Byte Data Controlled by LDQM, UDQM
• Auto-precharge and Controlled Precharge
• 4K Refresh cycles/64mS
• Interface: LVTTL
• Packaged in VFBGA 60 balls pitch = 0.65mm, using Lead free materials with RoHS compliant