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EDA ModelsEasyEDA
ST STGFW80V60F
| Manufacturer | |
| MPN | STGFW80V60F |
| LCSC Part # | C17671997 |
| Packaging | TO-3P-3 |
| Customer # | |
| Key Attributes | 79W 120A 600V FS (Field Stop) TO-3P-3 Single IGBTs RoHS |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-3P-3 | |
| Td(off) | 220ns | |
| Pd - Power Dissipation | 79W | |
| Td(on) | 60ns | |
| Current - Collector(Ic) | 120A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V,80A | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Gate Charge(Qg) | 448nC | |
| Switching Energy(Eoff) | 1mJ | |
| Turn-On Energy (Eon) | 1.8mJ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-3P-3 | |
| Td(off) | 220ns | |
| Pd - Power Dissipation | 79W | |
| Td(on) | 60ns | |
| Current - Collector(Ic) | 120A |
| Type | Description | |
|---|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V,80A | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Gate Charge(Qg) | 448nC | |
| Switching Energy(Eoff) | 1mJ | |
| Turn-On Energy (Eon) | 1.8mJ |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-3P-3 | |
| Td(off) | 220ns | |
| Pd - Power Dissipation | 79W | |
| Td(on) | 60ns | |
| Current - Collector(Ic) | 120A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V,80A | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Gate Charge(Qg) | 448nC | |
| Switching Energy(Eoff) | 1mJ | |
| Turn-On Energy (Eon) | 1.8mJ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-3P-3 | |
| Td(off) | 220ns | |
| Pd - Power Dissipation | 79W | |
| Td(on) | 60ns | |
| Current - Collector(Ic) | 120A |
| Type | Description | |
|---|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V,80A | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Gate Charge(Qg) | 448nC | |
| Switching Energy(Eoff) | 1mJ | |
| Turn-On Energy (Eon) | 1.8mJ |
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C17671997 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |