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NTE Electronics 1N4247 product image
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NTE Electronics 1N4247

Manufacturer
NTE Electronics
MPN
1N4247
LCSC Part #
C17650308
Packaging
Through Hole
Customer #
Key Attributes
Through Hole Single Diodes RoHS
DatasheetNTE Electronics 1N4247
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QtyUnit Price(Reference Only)Total Amount
1+$ 3.3338$ 3.33
200+$ 1.3314$ 266.28
500+$ 1.286$ 643.00
1,000+$ 1.2648$ 1264.80
Standard Packaging25/Full Bag
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerNTE Electronics
PackagingThrough Hole
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Features

AI Translation
  • Working peak reverse voltage (TJ = -65°C to +175°C) VRWM: 200V for 1N4245, 400V for 1N4246, 600V for 1N4247, 800V for 1N4248, 1000V for 1N4249
  • DC blocking voltage (TJ = -65°C to +175°C) VR: 200V for 1N4245, 400V for 1N4246, 600V for 1N4247, 800V for 1N4248, 1000V for 1N4249
  • Average forward current IO: 1A at TA = +55°C, 2.5A at TA = +25°C
  • Non-repetitive peak surge current (0.0083s, half sine wave) IFSM: 25A
  • Non-repetitive peak surge current (0.001s, half sine wave) IFSM: 90A at full load, TJ = +160°C; 100A at no load, TA = +25°C
  • I²t, fusing RMS value (0.001 to 0.01s) I²t: 4A²s
  • Peak non-repetitive reverse power rating (20μs, half sine wave, TJ = max) PRM: 1000W
  • Operating junction temperature range TJ: -65°C to +160°C
  • Storage temperature range Tstg: -65°C to +200°C
  • Color band indicates cathode