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Infineon IKQ50N120CT2XKSA1
| Manufacturer | |
| MPN | IKQ50N120CT2XKSA1 |
| LCSC Part # | C17436111 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | 652W 100A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS |
| Datasheet | Infineon IKQ50N120CT2XKSA1 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Pd - Power Dissipation | 652W | |
| Td(off) | 312ns | |
| Td(on) | 34ns | |
| Current - Collector(Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 199pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,50A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.75V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 410ns | |
| Switching Energy(Eoff) | 3.3mJ | |
| Turn-On Energy (Eon) | 3.8mJ | |
| Input Capacitance(Cies) | 3.27nF | |
| Output Capacitance(Coes) | 355pF | |
| Gate Charge(Qg) | 235nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Pd - Power Dissipation | 652W | |
| Td(off) | 312ns | |
| Td(on) | 34ns | |
| Current - Collector(Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 199pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,50A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.75V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 410ns | |
| Switching Energy(Eoff) | 3.3mJ | |
| Turn-On Energy (Eon) | 3.8mJ | |
| Input Capacitance(Cies) | 3.27nF | |
| Output Capacitance(Coes) | 355pF | |
| Gate Charge(Qg) | 235nC |
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 15.4453 | $ 15.45 |
| 10+ | $ 13.9491 | $ 139.49 |
| 30+ | $ 13.0377 | $ 391.13 |
| 90+ | $ 12.2741 | $ 1104.67 |
Standard Packaging30/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Pd - Power Dissipation | 652W | |
| Td(off) | 312ns | |
| Td(on) | 34ns | |
| Current - Collector(Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 199pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,50A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.75V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 410ns | |
| Switching Energy(Eoff) | 3.3mJ | |
| Turn-On Energy (Eon) | 3.8mJ | |
| Input Capacitance(Cies) | 3.27nF | |
| Output Capacitance(Coes) | 355pF | |
| Gate Charge(Qg) | 235nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Pd - Power Dissipation | 652W | |
| Td(off) | 312ns | |
| Td(on) | 34ns | |
| Current - Collector(Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 199pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,50A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.75V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 410ns | |
| Switching Energy(Eoff) | 3.3mJ | |
| Turn-On Energy (Eon) | 3.8mJ | |
| Input Capacitance(Cies) | 3.27nF | |
| Output Capacitance(Coes) | 355pF | |
| Gate Charge(Qg) | 235nC |
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C17436111 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IKQ75N120CS6 | Infineon | TO-247-3 | 20 | $ 13.9119 | ||
| IXYH55N120C4-HXY | HXY MOSFET | TO-247 | 17 | $7.1742 $7.5517 | ||
| IKQ140N120CH7XKSA1 | Infineon | TO-247-3 | 22 | $ 11.2963 | ||
| FGY100T120SWD | onsemi | TO-247-3LD | 30 | $ 5.0013 | ||
| IKQ50N120CH3XKSA1 | Infineon | TO-247-3 | 0 | $ 7.8335 | ||
| STGYA50M120DF3 | ST | TO-247-3 | 0 | $ 13.9604 | ||
| FGHL60T120RWD | onsemi | TO-247 | 0 | $ 13.2586 | ||
| APT75GN120B2G | MICROCHIP | TO-247-3 | 0 | $ 43.2818 | ||
| FGY100T120RWD | onsemi | TO-247-3 | 0 | $ 16.0578 | ||
| APT100GN120B2G | MICROCHIP | TO-247-3 | 0 | $ 67.7011 |