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EDA ModelsEasyEDA
Littelfuse/IXYS IXYL60N450
| Manufacturer | |
| MPN | IXYL60N450 |
| LCSC Part # | C17430979 |
| Packaging | - |
| Customer # | |
| Key Attributes | 417W 90A 4.5kV Single IGBTs RoHS |
| Datasheet | Littelfuse/IXYS IXYL60N450 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Littelfuse/IXYS | |
| Packaging | - | |
| Pd - Power Dissipation | 417W | |
| Td(off) | 450ns | |
| Td(on) | 55ns | |
| Current - Collector(Ic) | 90A | |
| Collector-Emitter Breakdown Voltage (Vces) | 4.5kV | |
| Reverse Transfer Capacitance (Cres) | 115pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.3V@15V,60A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 3.3V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 7.53nF | |
| Output Capacitance(Coes) | 270pF | |
| Gate Charge(Qg) | 366nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Littelfuse/IXYS | |
| Packaging | - | |
| Pd - Power Dissipation | 417W | |
| Td(off) | 450ns | |
| Td(on) | 55ns | |
| Current - Collector(Ic) | 90A | |
| Collector-Emitter Breakdown Voltage (Vces) | 4.5kV | |
| Reverse Transfer Capacitance (Cres) | 115pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.3V@15V,60A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 3.3V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 7.53nF | |
| Output Capacitance(Coes) | 270pF | |
| Gate Charge(Qg) | 366nC |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Silicon die on Direct Copper Bonding (DCB) substrate
- Isolated mounting surface
- 4000V~ electrical isolation
- High blocking voltage
- High peak current capability
- Low saturation voltage
- Low gate drive requirements
- High power density
Applications
AI Translation
- Switch-mode and resonant-mode power supplies
- Uninterruptible power supplies (UPS)
- Laser generators
- Capacitor discharge circuits
- AC switches
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 194.7109 | $ 194.71 |
| 200+ | $ 77.6918 | $ 15538.36 |
| 500+ | $ 75.0959 | $ 37547.95 |
| 1,000+ | $ 73.8118 | $ 73811.80 |
Standard Packaging25/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Littelfuse/IXYS | |
| Packaging | - | |
| Pd - Power Dissipation | 417W | |
| Td(off) | 450ns | |
| Td(on) | 55ns | |
| Current - Collector(Ic) | 90A | |
| Collector-Emitter Breakdown Voltage (Vces) | 4.5kV | |
| Reverse Transfer Capacitance (Cres) | 115pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.3V@15V,60A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 3.3V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 7.53nF | |
| Output Capacitance(Coes) | 270pF | |
| Gate Charge(Qg) | 366nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Littelfuse/IXYS | |
| Packaging | - | |
| Pd - Power Dissipation | 417W | |
| Td(off) | 450ns | |
| Td(on) | 55ns | |
| Current - Collector(Ic) | 90A | |
| Collector-Emitter Breakdown Voltage (Vces) | 4.5kV | |
| Reverse Transfer Capacitance (Cres) | 115pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.3V@15V,60A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 3.3V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 7.53nF | |
| Output Capacitance(Coes) | 270pF | |
| Gate Charge(Qg) | 366nC |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Silicon die on Direct Copper Bonding (DCB) substrate
- Isolated mounting surface
- 4000V~ electrical isolation
- High blocking voltage
- High peak current capability
- Low saturation voltage
- Low gate drive requirements
- High power density
Applications
AI Translation
- Switch-mode and resonant-mode power supplies
- Uninterruptible power supplies (UPS)
- Laser generators
- Capacitor discharge circuits
- AC switches
C17430979 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |