NXP PDTC143ZQA147

Fabricant	NXP
Réf. Fab.	PDTC143ZQA147
Réf. LCSC	C17426658
Condit.	-
Numéro Client
Caract. clés	50V 100mA 280mW Single, Pre-Biased Bipolar Transistors

Spécifications du Produit

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Type	Description
Catégorie	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors
Fabricant	NXP
Condit.	-
Collector - Emitter Voltage VCEO	50V
Operating temperature	-55℃~+150℃
Current - Collector(Ic)	100mA
Resistor Ratio	10
Pd - Power Dissipation	280mW
Voltage - Input(Max)(VI(off))	600mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)	1.1V@5mA,0.3V

Type	Description
Catégorie	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors
Fabricant	NXP
Condit.	-
Collector - Emitter Voltage VCEO	50V
Operating temperature	-55℃~+150℃

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Qté	Prix unit.(Référence uniquement)	Montant total
1+	$ 0.0794	$ 0.08
200+	$ 0.0317	$ 6.34
500+	$ 0.0307	$ 15.35
1,000+	$ 0.0301	$ 30.10
Boîtier Standard10051/Full Bag

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Tout

Type	Description
Catégorie	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors
Fabricant	NXP
Condit.	-
Collector - Emitter Voltage VCEO	50V
Operating temperature	-55℃~+150℃
Current - Collector(Ic)	100mA
Resistor Ratio	10
Pd - Power Dissipation	280mW
Voltage - Input(Max)(VI(off))	600mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)	1.1V@5mA,0.3V

Type	Description
Catégorie	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors
Fabricant	NXP
Condit.	-
Collector - Emitter Voltage VCEO	50V
Operating temperature	-55℃~+150℃