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TOSHIBA SSM6P35AFU,LF product image
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TOSHIBA SSM6P35AFU,LF

Manufacturer
TOSHIBA
MPN
SSM6P35AFU,LF
LCSC Part #
C17407752
Packaging
TSSOP-6(SC-88)SOT-363
Customer #
Key Attributes
20V 250mA 600mW 20Ω@1.2V 1V TSSOP-6(SC-88)SOT-363 FET, MOSFET Arrays RoHS
DatasheetTOSHIBA SSM6P35AFU,LF
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.1671$ 0.17
200+$ 0.0667$ 13.34
500+$ 0.0645$ 32.25
1,000+$ 0.0634$ 63.40
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerTOSHIBA
PackagingTSSOP-6(SC-88)SOT-363
Drain to Source Voltage20V
Current - Continuous Drain(Id)250mA
Pd - Power Dissipation600mW
RDS(on)20Ω@1.2V
Gate Threshold Voltage (Vgs(th))1V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)2pF
Number-
Input Capacitance(Ciss)42pF
Gate Charge(Qg)-
Operating Temperature-
Output Capacitance(Coss)6pF
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Introduction

AI Translation

MwT-PH15F is an AlGaAs/InGaAs pHEMT device with a nominal gate length of 0.25 microns and a gate width of 630 microns, ideally suited for applications requiring high gain and medium power at frequencies up to 28 GHz. The device is equally effective in broadband (e.g., 6 to 18 GHz) or narrowband applications. The die is fabricated with a proven metal system and passivated to ensure excellent reliability.

Features

AI Translation
  • 1.2V drive
  • Low RDS(ON): RDS(ON) = 3.2Ω (typ) at VGS = -1.2V
  • RDS(ON) = 2.3Ω (typ) at VGS = -1.5V
  • RDS(ON) = 2.0Ω (typ) at VGS = -1.8V
  • RDS(ON) = 1.5Ω (typ) at VGS = -2.5V
  • RDS(ON) = 1.1Ω (typ) at VGS = -4.5V

Applications

AI Translation
  • Analog Switch