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Infineon AIKW50N65RF5XKSA1
| Manufacturer | |
| MPN | AIKW50N65RF5XKSA1 |
| LCSC Part # | C17375807 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | 250W 80A 650V TO-247-3 Single IGBTs RoHS |
| Datasheet | Infineon AIKW50N65RF5XKSA1 |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Td(off) | 156ns | |
| Pd - Power Dissipation | 250W | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 8pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 120uJ | |
| Turn-On Energy (Eon) | 310uJ | |
| Input Capacitance(Cies) | 2.85nF | |
| Output Capacitance(Coes) | 240pF | |
| Gate Charge(Qg) | 109nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Td(off) | 156ns | |
| Pd - Power Dissipation | 250W | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 8pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 120uJ | |
| Turn-On Energy (Eon) | 310uJ | |
| Input Capacitance(Cies) | 2.85nF | |
| Output Capacitance(Coes) | 240pF | |
| Gate Charge(Qg) | 109nC |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Best-in-class efficiency in hard-switching and resonant topologies
- 650V breakdown voltage
- Trenchstop™ 5 fast-switching IGBT
- CoolSiC™ Schottky Diode G5
- Low gate charge QG
- Maximum junction temperature 175℃
- Qualified according to AEC-Q101/100
- Lead-free lead plating; RoHS compliant
Applications
AI Translation
Onboard Charger, DC/DC Converter
Out of Stock
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 11.9096 | $ 11.91 |
| 210+ | $ 4.753 | $ 998.13 |
| 510+ | $ 4.5934 | $ 2342.63 |
| 990+ | $ 4.5159 | $ 4470.74 |
Standard Packaging30/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Td(off) | 156ns | |
| Pd - Power Dissipation | 250W | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 8pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 120uJ | |
| Turn-On Energy (Eon) | 310uJ | |
| Input Capacitance(Cies) | 2.85nF | |
| Output Capacitance(Coes) | 240pF | |
| Gate Charge(Qg) | 109nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Td(off) | 156ns | |
| Pd - Power Dissipation | 250W | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 8pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.6V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 120uJ | |
| Turn-On Energy (Eon) | 310uJ | |
| Input Capacitance(Cies) | 2.85nF | |
| Output Capacitance(Coes) | 240pF | |
| Gate Charge(Qg) | 109nC |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Best-in-class efficiency in hard-switching and resonant topologies
- 650V breakdown voltage
- Trenchstop™ 5 fast-switching IGBT
- CoolSiC™ Schottky Diode G5
- Low gate charge QG
- Maximum junction temperature 175℃
- Qualified according to AEC-Q101/100
- Lead-free lead plating; RoHS compliant
Applications
AI Translation
Onboard Charger, DC/DC Converter
C17375807 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SGT50T65SDM1P7 | Hangzhou Silan Microelectronics | TO-247-3L | 39 | $ 2.1965 | ||
| IKWH50N65EH7XKSA1 | Infineon | TO-247-3 | 16 | $ 9.2214 | ||
| IKW50N65SS5XKSA1 | Infineon | TO-247-3 | 3 | $ 11.035 | ||
| IKW50N65F5 | Infineon | TO-247-3 | 725 | $ 3.2632 | ||
| IGW50N65F5 | Infineon | TO-247-3 | 20 | $ 4.661 | ||
| BIDW50N65T | BOURNS | TO-247 | 0 | $ 4.385 | ||
| IGW50N65H5AXKSA1 | Infineon | TO-247-3 | 0 | $ 9.053 | ||
| RGT00TS65DGC11 | ROHM | TO-247-3 | 0 | $ 2.1704 | ||
| RGT00TS65DGC13 | ROHM | TO-247G | 0 | $ 5.2607 | ||
| AOK50B65M2 | AOS | TO-247 | 0 | $ 4.4841 |