Infineon 2EDB7259KXUMA1

The 2EDi is a family of dual-channel isolated gate driver ICs designed to drive Si MOSFETs, SiC MOSFETs and GaN power switches. Isolation is achieved by means of Infineon coreless transformer (CT) technology which guarantees robust operation and industry benchmark common-mode rejection (CMTI). The high propagation delay accuracy and low channel-to-channel mismatch makes the product ideal for use in fast-switching power system. In addition, high CMTI, high reverse current capability and fast clamping of the output below UVLO guarantees reliable operation in the application.

• 5 A/9 A source/sink currents
• Propagation delay typ. 38 ns with 6 ns channel-to-channel precision
• Strong driving enables reduced switching losses
• Accurate timing enables dead-time optimization or synchronized driving in case of parallel MOSFETs
• Optimized for area and system BOM (source and sink output resistance < 1 Ω)
• Output stages with 5 A reverse current capability
• Most of the driving power is dissipated externally with reduced thermal stress on the driver
• Eliminates two costly protection diodes on the gate driver outputs
• CMTI > 150 V/ns
• Under voltage lockout function for switch protection
• Dead time control and shoot through protection
• Reliable driver operation against fast switching transients
• MOSFET is protected from thermal stress in abnormal conditions
• Protection against noise and spurious pulses
• Input-to-output channel isolation
• Functional, basic and reinforced galvanic isolation
• Functional for level-shifting and ground bounce immunity
• Reinforced for control of primary-side MOSFETs from secondary-side controller
• Simplified safety approval through component standards (UL1577, IEC60747 - 17) and system standards (IEC62368) certificates

• Server
• Telecom
• DC-DC converters
• Power tools
• Industrial SMPS
• Low-speed electrical vehicles
• Solar micro inverter
• LED Lighting