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RENESAS RJP60F5DPK-01#T0
| Manufacturer | |
| MPN | RJP60F5DPK-01#T0 |
| LCSC Part # | C17312733 |
| Packaging | TO-3P |
| Customer # | |
| Key Attributes | 260.4W 80A 600V TO-3P Single IGBTs RoHS |
| Datasheet | RENESAS RJP60F5DPK-01#T0 |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | RENESAS | |
| Packaging | TO-3P | |
| Td(off) | 90ns | |
| Pd - Power Dissipation | 260.4W | |
| Td(on) | 53ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 43pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.8V@15V,40A | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 1.37V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.78nF | |
| Output Capacitance(Coes) | 100pF | |
| Gate Charge(Qg) | 74nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | RENESAS | |
| Packaging | TO-3P | |
| Td(off) | 90ns | |
| Pd - Power Dissipation | 260.4W | |
| Td(on) | 53ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 43pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.8V@15V,40A | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 1.37V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.78nF | |
| Output Capacitance(Coes) | 100pF | |
| Gate Charge(Qg) | 74nC |
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Features
AI Translation
- Low collector-emitter saturation voltage ΔVCE(sat) = 1.37 V (typ.) (IC = 40 A, VGE = 15 V, Ta = 25°C)
- High-speed switching tf = 85 ns (typ.) (at IC = 30 A, ΔVCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load conditions)
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 5.7047 | $ 5.70 |
| 200+ | $ 2.2762 | $ 455.24 |
| 500+ | $ 2.2 | $ 1100.00 |
| 1,000+ | $ 2.1635 | $ 2163.50 |
Standard Packaging1/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | RENESAS | |
| Packaging | TO-3P | |
| Td(off) | 90ns | |
| Pd - Power Dissipation | 260.4W | |
| Td(on) | 53ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 43pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.8V@15V,40A | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 1.37V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.78nF | |
| Output Capacitance(Coes) | 100pF | |
| Gate Charge(Qg) | 74nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | RENESAS | |
| Packaging | TO-3P | |
| Td(off) | 90ns | |
| Pd - Power Dissipation | 260.4W | |
| Td(on) | 53ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 43pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.8V@15V,40A | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 1.37V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.78nF | |
| Output Capacitance(Coes) | 100pF | |
| Gate Charge(Qg) | 74nC |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Low collector-emitter saturation voltage ΔVCE(sat) = 1.37 V (typ.) (IC = 40 A, VGE = 15 V, Ta = 25°C)
- High-speed switching tf = 85 ns (typ.) (at IC = 30 A, ΔVCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load conditions)
C17312733 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MLG40N60FDL-W | Minos | TO-3P | 594 | $ 1.4333 | ||
| MLG40T65FDL-W | Minos | TO-3P | 586 | $ 1.2171 | ||
| FGA6560WDF | onsemi | TO-3PN | 534 | $ 3.0941 | ||
| JNG40T65AI | JIAENSEMI | TO-3P | 21 | $ 2.3249 | ||
| FGA60N65SMD | onsemi | TO-3PN | 3,469 | $ 2.9892 | ||
| CRG60T60AN3H | CRMICRO | TO-3PN | 967 | $ 2.7041 | ||
| CRG40T60AN3S | CRMICRO | TO-3PN | 1,262 | $ 1.5504 | ||
| FGA40N65SMD | onsemi | TO-3P | 831 | $ 2.2354 | ||
| IXYQ40N65B3D1 | Littelfuse/IXYS | TO-3P | 0 | $ 13.5582 | ||
| FGA6065ADF | onsemi | TO-3P-3 | 0 | $ 11.98 |