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PANJIT PJT7808_R1_00001
| Manufacturer | PANJITAsian Brands |
| MPN | PJT7808_R1_00001 |
| LCSC Part # | C17309541 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | 20V 500mA 3Ω@1.2V 350mW 900mV 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS |
| Datasheet | PANJIT PJT7808_R1_00001 |
| Alternative Parts | 2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | PANJIT | |
| Packaging | SOT-363 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 500mA | |
| RDS(on) | 3Ω@1.2V | |
| Pd - Power Dissipation | 350mW | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 67pF | |
| Gate Charge(Qg) | 1.4nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 19pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | PANJIT | |
| Packaging | SOT-363 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 500mA | |
| RDS(on) | 3Ω@1.2V | |
| Pd - Power Dissipation | 350mW | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 67pF | |
| Gate Charge(Qg) | 1.4nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 19pF |
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Introduction
AI Translation
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications, operating frequency range 1805 MHz to 1880 MHz and 1930 MHz to 1995 MHz.
Features
AI Translation
- Low-voltage drive (1.2V)
- Advanced trench process technology
- Specifically designed for switching loads, PWM applications, and more
- ESD protection
- Lead-free, compliant with EU RoHS Directive 2011/65/EU
- Green molding compound (halogen-free), compliant with IEC61249
Applications
AI Translation
- RF power amplifier for base station and multi-carrier applications in the 1805 MHz to 1880 MHz and 1930 MHz to 1995 MHz frequency ranges
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In-Stock: 1,090
1,090 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0961 | $ 0.48 |
| 50+ | $ 0.0791 | $ 3.96 |
| 150+ | $ 0.0705 | $ 10.58 |
| 500+ | $ 0.0641 | $ 32.05 |
| 3,000+ | $ 0.059 | $ 177.00 |
| 6,000+ | $ 0.0564 | $ 338.40 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | PANJIT | |
| Packaging | SOT-363 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 500mA | |
| RDS(on) | 3Ω@1.2V | |
| Pd - Power Dissipation | 350mW | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 67pF | |
| Gate Charge(Qg) | 1.4nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 19pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | PANJIT | |
| Packaging | SOT-363 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 500mA | |
| RDS(on) | 3Ω@1.2V | |
| Pd - Power Dissipation | 350mW | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 67pF | |
| Gate Charge(Qg) | 1.4nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 19pF |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications, operating frequency range 1805 MHz to 1880 MHz and 1930 MHz to 1995 MHz.
Features
AI Translation
- Low-voltage drive (1.2V)
- Advanced trench process technology
- Specifically designed for switching loads, PWM applications, and more
- ESD protection
- Lead-free, compliant with EU RoHS Directive 2011/65/EU
- Green molding compound (halogen-free), compliant with IEC61249
Applications
AI Translation
- RF power amplifier for base station and multi-carrier applications in the 1805 MHz to 1880 MHz and 1930 MHz to 1995 MHz frequency ranges
C17309541 EasyEDA Library
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| PJT7800_R1_00001 | PANJIT | SOT-363 | 3,640 | $ 0.1371 | ||
| PJT7802-AU_R1_000A1 | PANJIT | SOT-363 | 0 | $ 0.27 |