micron MTFC128GASAONS-AIT

Today's mobile devices are smarter than ever. Recent innovations are enabling entirely new ways to interact with smartphones, including advanced user authentication, augmented reality, natural language recognition, and personalized imaging capabilities. These advanced user experiences are powered by AI and driven by dedicated on-chip AI processing engines. The emergence of AI in flagship smartphones is driving demand for more advanced memory solutions to enable faster, more efficient data access. Analyst firm Gartner predicts that by 2022, 80% of smartphones will have on-device AI capabilities, increasing the need to process and store more data locally. If you're designing next-generation mobile user experiences, Micron's innovative 64-layer triple-level cell 3D NAND technology addresses memory performance challenges. It delivers the speed and features you need, with higher capacity than previous-generation NAND technology. By leveraging our CMOS-under-array technology, our new mobile NAND products pack more memory cells into a smaller die area, achieving the industry's smallest physical die size for 32GB. Our unique approach places all flash layers above the logic array, maximizing space utilization in smartphone designs. In addition, you can achieve ultra-fast mobile experiences with our select 3D NAND products featuring the Universal Flash Storage 2.1 standard. With UFS, you can: significantly improve read/write speeds and boot times; experience seamless HD streaming, higher-bandwidth gaming, and faster multimedia file loading; and enhance mobile camera performance when shooting burst photos such as panoramas or action shots.

• Write performance — 40,000 IOPS random write; 64-layer TLC 3D NAND delivers 50% faster performance than previous-generation TLC 3D NAND.
• UFS 2.1 high-speed Gear 3 interface — 200% higher bandwidth than eMMC 5.1; simultaneous read/write commands via command queuing.
• 4K read mode — enhanced random read performance.
• Peak power management system for significantly reduced peak memory power consumption in smartphones.
• 64-layer TLC 3D NAND with CMOS-under-array technology — doubles storage density over previous-generation TLC 3D NAND while maintaining the same package size.
• Proprietary floating gate technology delivers superior data retention compared to the charge trap gate used by competitors.

• Flagship smartphones
• Ultra-miniaturized devices