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MACOM MAPRST0912-350
| Manufacturer | |
| MPN | MAPRST0912-350 |
| LCSC Part # | C17267951 |
| Packaging | - |
| Customer # | |
| Key Attributes | 65V 1.34kW 32.5A NPN Bipolar RF Transistors RoHS |
| Datasheet | MACOM MAPRST0912-350 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Current - Collector Cutoff | - | |
| Emitter-Base Voltage(Vebo) | 3V | |
| Collector - Emitter Voltage VCEO | 65V | |
| Pd - Power Dissipation | 1.34kW | |
| DC Current Gain | - | |
| Current - Collector(Ic) | 32.5A | |
| Configuration | - | |
| Transition frequency(fT) | - | |
| Vce Saturation(VCE(sat)) | - | |
| type | NPN | |
| Number | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Current - Collector Cutoff | - | |
| Emitter-Base Voltage(Vebo) | 3V | |
| Collector - Emitter Voltage VCEO | 65V | |
| Pd - Power Dissipation | 1.34kW |
| Type | Description | |
|---|---|---|
| DC Current Gain | - | |
| Current - Collector(Ic) | 32.5A | |
| Configuration | - | |
| Transition frequency(fT) | - | |
| Vce Saturation(VCE(sat)) | - | |
| type | NPN | |
| Number | - |
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Features
AI Translation
- NPN silicon microwave power transistor, common-base configuration
- Wideband Class C operation, high-efficiency interdigitated geometry, diffused emitter ballast resistors
- Gold metallization system
- Internal input and output impedance matching, hermetic metal/ceramic package, RoHS compliant
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Current - Collector Cutoff | - | |
| Emitter-Base Voltage(Vebo) | 3V | |
| Collector - Emitter Voltage VCEO | 65V | |
| Pd - Power Dissipation | 1.34kW | |
| DC Current Gain | - | |
| Current - Collector(Ic) | 32.5A | |
| Configuration | - | |
| Transition frequency(fT) | - | |
| Vce Saturation(VCE(sat)) | - | |
| type | NPN | |
| Number | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Current - Collector Cutoff | - | |
| Emitter-Base Voltage(Vebo) | 3V | |
| Collector - Emitter Voltage VCEO | 65V | |
| Pd - Power Dissipation | 1.34kW |
| Type | Description | |
|---|---|---|
| DC Current Gain | - | |
| Current - Collector(Ic) | 32.5A | |
| Configuration | - | |
| Transition frequency(fT) | - | |
| Vce Saturation(VCE(sat)) | - | |
| type | NPN | |
| Number | - |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- NPN silicon microwave power transistor, common-base configuration
- Wideband Class C operation, high-efficiency interdigitated geometry, diffused emitter ballast resistors
- Gold metallization system
- Internal input and output impedance matching, hermetic metal/ceramic package, RoHS compliant
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |