MICROCHIP APT50GN120B2G
| Manufacturer | |
| MPN | APT50GN120B2G |
| LCSC Part # | C17254544 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | 543W 134A 1.2kV TO-247-3 Single IGBTs RoHS |
| Datasheet | MICROCHIP APT50GN120B2G |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-3 | |
| Td(off) | 320ns | |
| Pd - Power Dissipation | 543W | |
| Td(on) | 28ns | |
| Current - Collector(Ic) | 134A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 170pF | |
| IGBT Type | NPT (Non-Punch Through);FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.7V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 4.495mJ | |
| Turn-On Energy (Eon) | 3.9mJ | |
| Input Capacitance(Cies) | 3.6nF | |
| Output Capacitance(Coes) | 210pF | |
| Gate Charge(Qg) | 315nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-3 | |
| Td(off) | 320ns | |
| Pd - Power Dissipation | 543W | |
| Td(on) | 28ns | |
| Current - Collector(Ic) | 134A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 170pF | |
| IGBT Type | NPT (Non-Punch Through);FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.7V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 4.495mJ | |
| Turn-On Energy (Eon) | 3.9mJ | |
| Input Capacitance(Cies) | 3.6nF | |
| Output Capacitance(Coes) | 210pF | |
| Gate Charge(Qg) | 315nC |
Introduction
Utilizing the latest non-punch-through (NPT) field-stop technology, these IGBTs feature a very short, low-amplitude tail current and low turn-off energy (Eoff). The trench gate design delivers excellent collector-emitter on-state voltage (VCE(on)) performance. Tight parameter distribution and a slightly positive VCE(on) temperature coefficient facilitate easy paralleling. The built-in gate resistor ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.
Features
- 1200V NPT field stop
- Trench gate: low collector-emitter on-state voltage (V<sub>CE(on)</sub>)
- Easy to parallel
- 10μs short-circuit capability
- Integrated gate resistor: low EMI, high reliability
Applications
Welding, induction heating, solar inverters, switching power supplies, motor drives, uninterruptible power supplies
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 27.4005 | $ 27.40 |
| 200+ | $ 10.933 | $ 2186.60 |
| 500+ | $ 10.5679 | $ 5283.95 |
| 1,000+ | $ 10.3877 | $ 10387.70 |
Standard Packaging30/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-3 | |
| Td(off) | 320ns | |
| Pd - Power Dissipation | 543W | |
| Td(on) | 28ns | |
| Current - Collector(Ic) | 134A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 170pF | |
| IGBT Type | NPT (Non-Punch Through);FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.7V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 4.495mJ | |
| Turn-On Energy (Eon) | 3.9mJ | |
| Input Capacitance(Cies) | 3.6nF | |
| Output Capacitance(Coes) | 210pF | |
| Gate Charge(Qg) | 315nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-3 | |
| Td(off) | 320ns | |
| Pd - Power Dissipation | 543W | |
| Td(on) | 28ns | |
| Current - Collector(Ic) | 134A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 170pF | |
| IGBT Type | NPT (Non-Punch Through);FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.7V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 4.495mJ | |
| Turn-On Energy (Eon) | 3.9mJ | |
| Input Capacitance(Cies) | 3.6nF | |
| Output Capacitance(Coes) | 210pF | |
| Gate Charge(Qg) | 315nC |
Introduction
Utilizing the latest non-punch-through (NPT) field-stop technology, these IGBTs feature a very short, low-amplitude tail current and low turn-off energy (Eoff). The trench gate design delivers excellent collector-emitter on-state voltage (VCE(on)) performance. Tight parameter distribution and a slightly positive VCE(on) temperature coefficient facilitate easy paralleling. The built-in gate resistor ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.
Features
- 1200V NPT field stop
- Trench gate: low collector-emitter on-state voltage (V<sub>CE(on)</sub>)
- Easy to parallel
- 10μs short-circuit capability
- Integrated gate resistor: low EMI, high reliability
Applications
Welding, induction heating, solar inverters, switching power supplies, motor drives, uninterruptible power supplies
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IXYH85N120A4 | Littelfuse/IXYS | TO-247 | 10 | $ 13.3462 | ||
| AUIRG4PH50S | Infineon | TO-247AC | 35 | $ 6.5723 | ||
| IXYX110N120C4 | Littelfuse/IXYS | TO-247-3 | 3 | $ 30.7091 | ||
| FGY75T120SQDN | onsemi | TO-247-3 | 140 | $ 5.7736 | ||
| IXYH85N120C4 | Littelfuse/IXYS | TO-247 | 0 | $ 18.9905 | ||
| CRG75T120AX3HD | CRMICRO | TO-247Plus | 0 | $ 5.6148 | ||
| APT75GN120B2G | MICROCHIP | TO-247-3 | 0 | $ 43.2818 | ||
| KGM75N120AI | KIA Semicon Tech | TO-247 | 0 | $ 8.7656 | ||
| APT70GR120B2 | MICROCHIP | TO-247 | 0 | $ 35.3449 | ||
| APT50GF120B2RG | MICROCHIP | TO-247-3 | 0 | $ 56.2701 |