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VISHAY SQ4282EY-T1_BE3
| Manufacturer | |
| MPN | SQ4282EY-T1_BE3 |
| LCSC Part # | C17246103 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | 30V 8A 21mΩ@10V 3.9W 2.5V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS |
| Datasheet | VISHAY SQ4282EY-T1_BE3 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 8A | |
| RDS(on) | 21mΩ@10V | |
| Pd - Power Dissipation | 3.9W | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 173pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.367nF | |
| Gate Charge(Qg) | 47nC@10V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 495pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 8A | |
| RDS(on) | 21mΩ@10V | |
| Pd - Power Dissipation | 3.9W | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 173pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.367nF | |
| Gate Charge(Qg) | 47nC@10V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 495pF |
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Introduction
AI Translation
NPT1012B GaN HEMT is a power transistor optimized for operation from DC to 4 GHz. The device supports CW, pulsed, and linear operating modes with an output power of up to 25 W. This transistor is offered in an industry-standard SMT plastic package.
Features
AI Translation
- Trench power MOSFET
- AEC-Q101 qualified
- 100% Rg and UIS tested
Applications
AI Translation
- Land mobile radio
- Wireless infrastructure
- Industrial, Scientific and Medical (ISM) band
- VHF/UHF/L/S-band radar
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.6841 | $ 1.68 |
| 200+ | $ 0.673 | $ 134.60 |
| 500+ | $ 0.6492 | $ 324.60 |
| 1,000+ | $ 0.6381 | $ 638.10 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 8A | |
| RDS(on) | 21mΩ@10V | |
| Pd - Power Dissipation | 3.9W | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 173pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.367nF | |
| Gate Charge(Qg) | 47nC@10V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 495pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 8A | |
| RDS(on) | 21mΩ@10V | |
| Pd - Power Dissipation | 3.9W | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 173pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.367nF | |
| Gate Charge(Qg) | 47nC@10V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 495pF |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
NPT1012B GaN HEMT is a power transistor optimized for operation from DC to 4 GHz. The device supports CW, pulsed, and linear operating modes with an output power of up to 25 W. This transistor is offered in an industry-standard SMT plastic package.
Features
AI Translation
- Trench power MOSFET
- AEC-Q101 qualified
- 100% Rg and UIS tested
Applications
AI Translation
- Land mobile radio
- Wireless infrastructure
- Industrial, Scientific and Medical (ISM) band
- VHF/UHF/L/S-band radar
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SQ4284EY-T1_GE3 | VISHAY | SO-8 | 68 | $1.9500 $2.3493 | ||
| SQ4940AEY-T1_GE3 | VISHAY | SO-8 | 54 | $ 0.9732 | ||
| SQ4940AEY-T1_BE3 | VISHAY | SOIC-8 | 100 | $ 0.9527 | ||
| JMTP170N06D | Jiangsu JieJie Microelectronics | SOIC-8 | 280 | $ 0.2331 | ||
| VBZA9945 | VBsemi Elec | SO-8 | 1,151 | $0.3688 $0.4338 | ||
| AO4838-VB | VBsemi Elec | SO-8 | 20 | $0.4859 $0.5716 | ||
| HAT2092RJ-VB | VBsemi Elec | SO-8 | 50 | $0.4859 $0.5716 | ||
| EMB17A03G-VB | VBsemi Elec | SO-8 | 15 | $0.4657 $0.5478 | ||
| SQ4282EY-T1_GE3 | VISHAY | SOIC-8 | 0 | $ 1.5448 | ||
| SQ4284EY-T1_BE3 | VISHAY | SO-8 | 0 | $ 3.4202 |