Advanced Linear Devices ALD210814PCL

The ALD210800A/ALD210800 precision N-channel EPAD MOSFET arrays are precision-matched at the factory using ALD's proven EPAD CMOS technology. These quad monolithic devices are enhanced versions of the ALD110800A/ALD110800 EPAD MOSFET family, featuring higher forward transconductance and output conductance, particularly excelling at extremely low supply voltages. The ALD210800A/ALD210800 are designed for low-voltage, low-power small-signal applications, characterized by a zero threshold voltage that allows circuit designs with input/output signals referenced to ground across an extended operating voltage range. These devices enable the construction of multi-stage cascaded circuits operating at extremely low supply/bias voltage levels. A key feature of the ALD210800A EPAD MOSFET is that the gate threshold voltage VGS(th) of matched devices is precisely set to 0.00V ±0.01V (IDS = +10μA, VDS = 0.1V), with a typical offset voltage of only ±0.001V (1mV). Integrated on a single monolithic die, they also exhibit excellent temperature tracking characteristics. These precision devices serve as versatile design components for a wide range of analog small-signal applications, including current mirrors, matched circuits, current sources, differential amplifier input stages, transmission gates, and fundamental building blocks for multiplexers. They also excel in limited supply voltage applications such as extremely low-level voltage clamping and micro-power normally-on circuits. Beyond precision-matched paired electrical characteristics, each individual EPAD MOSFET features well-controlled manufacturing parameters, enabling users to rely on tight design limits across different production lots. These devices are designed for minimum offset voltage and differential thermal response, suitable for switching and amplification applications in +0.1V to +10V (±0.05V to ±5V) supply systems requiring low input bias current, low input capacitance, and fast switching speed. When VDS > 0.00V, the devices exhibit enhancement-mode characteristics; when VGS < 0.00V, the devices operate in the subthreshold region, exhibiting conventional depletion-mode characteristics with well-controlled turn-off and subthreshold levels, operating in the same manner as standard enhancement-mode MOSFETs. The ALD210800A/ALD210800 feature high input impedance (2.5 x 10^10Ω) and high DC current gain (>10^8).

• Zero-Threshold™ VGS(th) = 0.00 V ±0.01 V
• VOS (VGS(th) matching) max 2mV / 10mV
• Sub-threshold voltage (micro-power) operation
• Minimum operating voltage < 100mV
• Minimum operating current < 1nA
• Minimum operating power < 1nW
• Operating current range > 100,000,000:1
• High transconductance and output conductance
• RDS(ON) as low as 25Ω
• Output current > 50mA
• Matched and tracking temperature coefficient
• Tight lot-to-lot parameter control
• Positive, zero, and negative VGS(th) temperature coefficients
• Low input capacitance and leakage current

• Low-overhead current mirrors and current sources
• Zero-power normally-on circuits
• Energy harvesting detectors
• Ultra-low voltage analog and digital circuits
• Zero-power fail-safe circuits
• Backup battery circuits and power failure detectors
• Ultra-low level voltage clamps
• Ultra-low level zero-crossing detectors
• Matched source followers and buffers
• Precision current mirrors and current sources
• Matched capacitive probe and sensor interfaces
• Charge detectors and charge integrators
• High-gain differential amplifier input stages
• Matched peak detectors and level shifters
• Multi-channel sample-and-hold switches
• Precision current multipliers
• Discrete matched analog switches/multiplexers
• Micropower discrete voltage comparators