MICROCHIP APT100GN120J
| Manufacturer | |
| MPN | APT100GN120J |
| LCSC Part # | C17219018 |
| Packaging | SOT-227B-4 |
| Customer # | |
| Key Attributes | 446W 153A 1.2kV FS (Field Stop) SOT-227B-4 IGBT Modules RoHS |
| Datasheet | MICROCHIP APT100GN120J |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-227B-4 | |
| Td(off) | 615ns | |
| Pd - Power Dissipation | 446W | |
| Td(on) | 50ns | |
| Current - Collector(Ic) | 153A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 280pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 540nC@15V | |
| Vce Saturation(VCE(sat)) | 1.7V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 9.5mJ | |
| Turn-On Energy (Eon) | 11mJ | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Input Capacitance(Cies) | 6.5nF@25V | |
| Output Capacitance(Coes) | 365pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-227B-4 | |
| Td(off) | 615ns | |
| Pd - Power Dissipation | 446W | |
| Td(on) | 50ns | |
| Current - Collector(Ic) | 153A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 280pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 540nC@15V | |
| Vce Saturation(VCE(sat)) | 1.7V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 9.5mJ | |
| Turn-On Energy (Eon) | 11mJ | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Input Capacitance(Cies) | 6.5nF@25V | |
| Output Capacitance(Coes) | 365pF |
Introduction
These IGBTs employ the latest field-stop and trench gate technologies, featuring extremely low V<sub>CE(ON)</sub>, making them ideal for low-frequency applications requiring minimal conduction losses. The tight parameter distribution and slightly positive V<sub>CE(ON)</sub> temperature coefficient facilitate easy paralleling. The built-in gate resistor ensures highly reliable operation even under short-circuit fault conditions. Low gate charge simplifies gate drive design and minimizes losses.
Features
- 1200V field-stop
- Trench gate: low V<sub>CE(on)</sub>
- Easy to parallel
- Integrated gate resistor: low EMI, high reliability
Applications
Welding, induction heating, solar inverters, switching power supplies, motor drives, uninterruptible power supplies
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 113.4643 | $ 113.46 |
| 200+ | $ 45.2727 | $ 9054.54 |
| 500+ | $ 43.7603 | $ 21880.15 |
| 1,000+ | $ 43.0132 | $ 43013.20 |
Standard Packaging1/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-227B-4 | |
| Td(off) | 615ns | |
| Pd - Power Dissipation | 446W | |
| Td(on) | 50ns | |
| Current - Collector(Ic) | 153A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 280pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 540nC@15V | |
| Vce Saturation(VCE(sat)) | 1.7V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 9.5mJ | |
| Turn-On Energy (Eon) | 11mJ | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Input Capacitance(Cies) | 6.5nF@25V | |
| Output Capacitance(Coes) | 365pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-227B-4 | |
| Td(off) | 615ns | |
| Pd - Power Dissipation | 446W | |
| Td(on) | 50ns | |
| Current - Collector(Ic) | 153A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 280pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 540nC@15V | |
| Vce Saturation(VCE(sat)) | 1.7V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 9.5mJ | |
| Turn-On Energy (Eon) | 11mJ | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Input Capacitance(Cies) | 6.5nF@25V | |
| Output Capacitance(Coes) | 365pF |
Introduction
These IGBTs employ the latest field-stop and trench gate technologies, featuring extremely low V<sub>CE(ON)</sub>, making them ideal for low-frequency applications requiring minimal conduction losses. The tight parameter distribution and slightly positive V<sub>CE(ON)</sub> temperature coefficient facilitate easy paralleling. The built-in gate resistor ensures highly reliable operation even under short-circuit fault conditions. Low gate charge simplifies gate drive design and minimizes losses.
Features
- 1200V field-stop
- Trench gate: low V<sub>CE(on)</sub>
- Easy to parallel
- Integrated gate resistor: low EMI, high reliability
Applications
Welding, induction heating, solar inverters, switching power supplies, motor drives, uninterruptible power supplies
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IXYN110N120A4 | Littelfuse/IXYS | SOT-227B | 3 | $ 52.0749 | ||
| VS-GT180DA120U | VISHAY | SOT-227 | 1 | $ 103.9613 | ||
| VS-GT100DA120UF | VISHAY | SOT-227 | 3 | $ 61.4864 | ||
| IXYN100N120C3 | Littelfuse/IXYS | SOT-227B | 30 | $ 46.5209 | ||
| APT100GN120JDQ4 | MICROCHIP | SOT-227B-4 | 0 | $ 168.3051 | ||
| APT150GN120JDQ4 | MICROCHIP | SOT-227-4 | 0 | $ 146.1087 | ||
| APT100GT120JU3 | MICROCHIP | SOT-227 | 0 | $ 114.0266 | ||
| IXYN100N120B3H1 | Littelfuse/IXYS | SOT-227B | 0 | $ 54.486 | ||
| IXYN110N120C4 | Littelfuse/IXYS | SOT-227 | 0 | $ 50.9351 | ||
| IXGN200N170 | Littelfuse/IXYS | SOT-227B | 0 | $ 92.0853 |