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DIODES DMC6070LND-13
| Manufacturer | |
| MPN | DMC6070LND-13 |
| LCSC Part # | C17218982 |
| Packaging | PowerDI3333-8 |
| Customer # | |
| Key Attributes | 60V 3.1A 250mΩ@4.5V 1.4W 3V 1 N-Channel + 1 P-Channel PowerDI3333-8 FET, MOSFET Arrays RoHS |
| Datasheet | DIODES DMC6070LND-13 |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 3.1A | |
| RDS(on) | 250mΩ@4.5V | |
| Pd - Power Dissipation | 1.4W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 731pF | |
| Gate Charge(Qg) | 11.5nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 36pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 3.1A | |
| RDS(on) | 250mΩ@4.5V | |
| Pd - Power Dissipation | 1.4W | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 731pF | |
| Gate Charge(Qg) | 11.5nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 36pF |
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Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage Complementary Pair MOSFET
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Power Management Functions - Analog Switches
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.7941 | $ 0.79 |
| 200+ | $ 0.3183 | $ 63.66 |
| 500+ | $ 0.3077 | $ 153.85 |
| 1,000+ | $ 0.3016 | $ 301.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 3.1A | |
| RDS(on) | 250mΩ@4.5V | |
| Pd - Power Dissipation | 1.4W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 731pF | |
| Gate Charge(Qg) | 11.5nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 36pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 3.1A | |
| RDS(on) | 250mΩ@4.5V | |
| Pd - Power Dissipation | 1.4W | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 731pF | |
| Gate Charge(Qg) | 11.5nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 36pF |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage Complementary Pair MOSFET
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Power Management Functions - Analog Switches
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| DMC6070LND-7 | DIODES | PowerDI3333-8 | 10 | $ 2.7392 | ||
| CMSC25NP06 | Cmos | DFN-8(3.3x3.3) | 5 | $0.1799 $0.1893 | ||
| AGM1095MAP | AGMSEMI | PDFN3.3x3.3-8 | 150 | $ 0.2095 | ||
| SIS590DN-T1-GE3 | VISHAY | PowerPAK1212-8 | 0 | $ 0.9635 | ||
| AGM628MAP | AGMSEMI | PDFN-8(3.3x3.3) | 0 | $ 0.2677 |