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UTC 7NM70G-TMN2-T
| Manufacturer | UTCAsian Brands |
| MPN | 7NM70G-TMN2-T |
| LCSC Part # | C171512 |
| Packaging | TO-251N |
| Customer # | |
| Key Attributes | MOSFET N-CH 700V 7A TO-251N |
| Datasheet | UTC 7NM70G-TMN2-T |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UTC | |
| Packaging | TO-251N | |
| Output Capacitance(Coss) | 223pF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 19nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UTC | |
| Packaging | TO-251N | |
| Output Capacitance(Coss) | 223pF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 19nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
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Introduction
AI Translation
The UTC 7NM70 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.
Features
AI Translation
- 7.0A, 700V N-CHANNEL SUPER-JUNCTION MOSFET
- RDS(ON) < 1.0Ω @ VGS = 10V, ID = 3.5A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4798 | $ 0.48 |
| 10+ | $ 0.3848 | $ 3.85 |
| 30+ | $ 0.344 | $ 10.32 |
| 80+ | $ 0.2942 | $ 23.54 |
| 480+ | $ 0.2716 | $ 130.37 |
| 960+ | $ 0.258 | $ 247.68 |
Standard Packaging80/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UTC | |
| Packaging | TO-251N | |
| Output Capacitance(Coss) | 223pF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 19nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UTC | |
| Packaging | TO-251N | |
| Output Capacitance(Coss) | 223pF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 19nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The UTC 7NM70 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.
Features
AI Translation
- 7.0A, 700V N-CHANNEL SUPER-JUNCTION MOSFET
- RDS(ON) < 1.0Ω @ VGS = 10V, ID = 3.5A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
C171512 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| 7N65G-TC-TM3-T | UTC | TO-251 | 9 | $ 0.4255 | ||
| 7N65KL-MTQ-TM3-T | UTC | TO-251 | 172 | $ 0.6938 |