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MATSUKI ME2306D
| Manufacturer | MATSUKIAsian Brands |
| MPN | ME2306D |
| LCSC Part # | C165220 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 5.3A SOT-23 |
| Datasheet | MATSUKI ME2306D |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 68pF | |
| Ciss-Input Capacitance | 370pF | |
| Pd - Power Dissipation | 1.39W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.3A | |
| Reverse Transfer Capacitance (Crss) | 21pF | |
| RDS(on) | 52mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 68pF | |
| Ciss-Input Capacitance | 370pF | |
| Pd - Power Dissipation | 1.39W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 5.3A | |
| Reverse Transfer Capacitance (Crss) | 21pF | |
| RDS(on) | 52mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Introduction
The ME2306D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
- RDS(ON) ≤ 31mΩ @ VGS = 10V
- RDS(ON) ≤ 52mΩ @ Vos = 4.5V
- ESD Protected
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
Applications
- Power Management in Notebook
- Portable Equipment
- Load Switch
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 68pF | |
| Ciss-Input Capacitance | 370pF | |
| Pd - Power Dissipation | 1.39W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.3A | |
| Reverse Transfer Capacitance (Crss) | 21pF | |
| RDS(on) | 52mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 68pF | |
| Ciss-Input Capacitance | 370pF | |
| Pd - Power Dissipation | 1.39W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 5.3A | |
| Reverse Transfer Capacitance (Crss) | 21pF | |
| RDS(on) | 52mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Introduction
The ME2306D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
- RDS(ON) ≤ 31mΩ @ VGS = 10V
- RDS(ON) ≤ 52mΩ @ Vos = 4.5V
- ESD Protected
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
Applications
- Power Management in Notebook
- Portable Equipment
- Load Switch
C165220 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |