ST STP2NK90Z
| Manufacturer | |
| MPN | STP2NK90Z |
| LCSC Part # | C155656 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 900V 2.1A TO-220 |
| Datasheet | ST STP2NK90Z |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 50pF | |
| Ciss-Input Capacitance | 485pF | |
| Pd - Power Dissipation | 70W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 2.1A | |
| Reverse Transfer Capacitance (Crss) | 10pF | |
| RDS(on) | 6.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 27nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 50pF | |
| Ciss-Input Capacitance | 485pF | |
| Pd - Power Dissipation | 70W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 2.1A | |
| Reverse Transfer Capacitance (Crss) | 10pF | |
| RDS(on) | 6.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 27nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Introduction
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Features
- Extremely high dv/dt capability
- Improved esd capability
- 100% avalanche rated
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatibility
Applications
- Switching application
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 50pF | |
| Ciss-Input Capacitance | 485pF | |
| Pd - Power Dissipation | 70W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 2.1A | |
| Reverse Transfer Capacitance (Crss) | 10pF | |
| RDS(on) | 6.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 27nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 50pF | |
| Ciss-Input Capacitance | 485pF | |
| Pd - Power Dissipation | 70W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 2.1A | |
| Reverse Transfer Capacitance (Crss) | 10pF | |
| RDS(on) | 6.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 27nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Introduction
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Features
- Extremely high dv/dt capability
- Improved esd capability
- 100% avalanche rated
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatibility
Applications
- Switching application
C155656 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



