- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
onsemi FDS6898AZ
| Manufacturer | |
| MPN | FDS6898AZ |
| LCSC Part # | C154514 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | 20V 9.4A 18mΩ@2.5V 2W 1.5V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS |
| Datasheet | onsemi FDS6898AZ |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 440pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9.4A | |
| RDS(on) | 18mΩ@2.5V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 208pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.821nF | |
| Gate Charge(Qg) | 23nC@4.5V | |
| Vgs | ±12V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 440pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9.4A | |
| RDS(on) | 18mΩ@2.5V | |
| Pd - Power Dissipation | 2W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 208pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.821nF | |
| Gate Charge(Qg) | 23nC@4.5V | |
| Vgs | ±12V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These N-channel logic-level MOSFETs are manufactured using Fairchild Semiconductor's advanced PowerTrench process, which is specially optimized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring low in-circuit power loss and fast switching.
Features
AI Translation
- 9.4 A, 20 V; RDS(ON) = 14 mΩ at VGS = 4.5 V
- RDS(ON) = 18 mΩ at VGS = 2.5 V
- Low gate charge (typical 16 nC)
- ESD protection diode
- High-performance trench technology for ultra-low RDS(ON)
- High power and current handling capability
- SO-8 package
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.1292 | $ 1.13 |
| 10+ | $ 0.9505 | $ 9.51 |
| 30+ | $ 0.8611 | $ 25.83 |
| 100+ | $ 0.7734 | $ 77.34 |
| 500+ | $ 0.7214 | $ 360.70 |
| 1,000+ | $ 0.6938 | $ 693.80 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 440pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9.4A | |
| RDS(on) | 18mΩ@2.5V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 208pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.821nF | |
| Gate Charge(Qg) | 23nC@4.5V | |
| Vgs | ±12V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 440pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9.4A | |
| RDS(on) | 18mΩ@2.5V | |
| Pd - Power Dissipation | 2W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 208pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.821nF | |
| Gate Charge(Qg) | 23nC@4.5V | |
| Vgs | ±12V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These N-channel logic-level MOSFETs are manufactured using Fairchild Semiconductor's advanced PowerTrench process, which is specially optimized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring low in-circuit power loss and fast switching.
Features
AI Translation
- 9.4 A, 20 V; RDS(ON) = 14 mΩ at VGS = 4.5 V
- RDS(ON) = 18 mΩ at VGS = 2.5 V
- Low gate charge (typical 16 nC)
- ESD protection diode
- High-performance trench technology for ultra-low RDS(ON)
- High power and current handling capability
- SO-8 package
C154514 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FDS6898A | onsemi | SO-8 | 36 | $ 1.0578 | ||
| SP30N08DP8 | Siliup | SOP-8L | 85 | $0.0977 $0.1395 | ||
| SL4884A | Slkor | SOP-8 | 1,930 | $0.1132 $0.1886 | ||
| AP2022S | ALLPOWER | SOP-8 | 1,145 | $ 0.2031 | ||
| IRF7907TRPBF | Infineon | SO-8 | 7 | $ 1.5824 | ||
| DOS15DN04 | DOINGTER | SOP-8D | 1,285 | $ 0.1786 | ||
| TW4884 | TWGMC | SOP-8 | 1,140 | $ 0.1082 | ||
| AO4884 | UMW | SOP-8 | 26,595 | $ 0.1954 | ||
| FDS6898AZ-F085 | onsemi | SOP-8 | 0 | $ 3.3571 | ||
| AO4806 | AOS | SOIC-8 | 0 | $ 0.5605 |