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Infineon IRF7410TRPBF
| Manufacturer | |
| MPN | IRF7410TRPBF |
| LCSC Part # | C148144 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 12V 16A SO-8 |
| Datasheet | Infineon IRF7410TRPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Output Capacitance(Coss) | 2.344nF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.604nF | |
| RDS(on) | 7mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 8.676nF | |
| Gate Charge(Qg) | 91nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Output Capacitance(Coss) | 2.344nF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 16A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.604nF | |
| RDS(on) | 7mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 8.676nF | |
| Gate Charge(Qg) | 91nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
Introduction
These P-Channel HEXFET® power MOSFETs utilize advanced processing technology to achieve extremely low on-resistance per unit silicon area. This advantage provides designers with a highly efficient device suitable for battery and load management applications. The SO-8 package has been enhanced with a custom leadframe to improve thermal characteristics and multi-chip integration capability, making it well-suited for a wide range of power applications. These improvements enable significant board space reduction when multiple devices are used in an application. The package is compatible with vapor phase, infrared, or wave soldering techniques.
Features
- Ultra-low on-resistance
- Surface mount
- Tape and reel packaging available
- Lead-free
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.1007 | $ 3.10 |
| 10+ | $ 2.6353 | $ 26.35 |
| 30+ | $ 2.3599 | $ 70.80 |
| 100+ | $ 2.0797 | $ 207.97 |
| 500+ | $ 1.9502 | $ 975.10 |
| 1,000+ | $ 1.8929 | $ 1892.90 |
Standard Packaging4000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Output Capacitance(Coss) | 2.344nF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.604nF | |
| RDS(on) | 7mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 8.676nF | |
| Gate Charge(Qg) | 91nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Output Capacitance(Coss) | 2.344nF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 16A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.604nF | |
| RDS(on) | 7mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 8.676nF | |
| Gate Charge(Qg) | 91nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
Introduction
These P-Channel HEXFET® power MOSFETs utilize advanced processing technology to achieve extremely low on-resistance per unit silicon area. This advantage provides designers with a highly efficient device suitable for battery and load management applications. The SO-8 package has been enhanced with a custom leadframe to improve thermal characteristics and multi-chip integration capability, making it well-suited for a wide range of power applications. These improvements enable significant board space reduction when multiple devices are used in an application. The package is compatible with vapor phase, infrared, or wave soldering techniques.
Features
- Ultra-low on-resistance
- Surface mount
- Tape and reel packaging available
- Lead-free
C148144 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FDS6681Z | onsemi | SO-8 | 1,675 | $ 1.5389 | ||
| TPM3019PS8-1 | TECH PUBLIC | SOP-8 | 500 | $0.6178 $0.6503 | ||
| TPC8127-TP | TECH PUBLIC | SOP-8 | 465 | $0.4681 $0.4927 | ||
| TPSI4459ADY | TECH PUBLIC | SOP-8 | 335 | $0.5133 $0.5403 | ||
| SI4101DY-T1-GE3 | VISHAY | SO-8 | 2,053 | $ 1.2364 | ||
| IRF9317TRPBF | Infineon | SO-8 | 7 | $ 0.844 | ||
| FDS7779Z(UMW) | UMW | SOP-8 | 3,000 | $ 0.2439 | ||
| SI4143DY-T1-GE3 | VISHAY | SO-8 | 88 | $ 0.9432 | ||
| TPSI4413ADY | TECH PUBLIC | SOP-8 | 424 | $0.5211 $0.5485 | ||
| AGM30P18S | AGMSEMI | SOP-8 | 0 | $ 0.3015 |