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Infineon IRF7410TRPBF product image
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Infineon IRF7410TRPBFRoHS

Manufacturer
Infineon
MPN
IRF7410TRPBF
LCSC Part #
C148144
Packaging
SO-8
Customer #
Key Attributes
MOSFET P-CH 12V 16A SO-8
Datasheetpdf iconInfineon IRF7410TRPBF
In-Stock: 16
16 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.2358$ 0.7910$ 0.79
10+$ 1.016$ 0.6503$ 6.50
30+$ 0.8939$ 0.5721$ 17.16
100+$ 0.7571$ 0.4846$ 48.46
500+$ 0.6953$ 0.4450$ 222.50
1,000+$ 0.6676$ 0.4273$ 427.30
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingSO-8
Drain to Source Voltage12V
Output Capacitance(Coss)2.344nF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)1.604nF
RDS(on)7mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)8.676nF
Gate Charge(Qg)91nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

These P-Channel HEXFET® power MOSFETs utilize advanced processing technology to achieve extremely low on-resistance per unit silicon area. This advantage provides designers with a highly efficient device suitable for battery and load management applications. The SO-8 package has been enhanced with a custom leadframe to improve thermal characteristics and multi-chip integration capability, making it well-suited for a wide range of power applications. These improvements enable significant board space reduction when multiple devices are used in an application. The package is compatible with vapor phase, infrared, or wave soldering techniques.

Features

AI Translation
  • Ultra-low on-resistance
  • Surface mount
  • Tape and reel packaging available
  • Lead-free