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VISHAY IRFR9214TRPBF
| Manufacturer | |
| MPN | IRFR9214TRPBF |
| LCSC Part # | C143706 |
| Packaging | DPAK |
| Customer # | |
| Key Attributes | 250V 2.7A 4V 50W 3Ω@10V 1 P-Channel P-Channel DPAK Single FETs, MOSFETs RoHS |
| Datasheet | VISHAY IRFR9214TRPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 9 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | DPAK | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 75pF | |
| Current - Continuous Drain(Id) | 2.7A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 220pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | DPAK | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 75pF | |
| Current - Continuous Drain(Id) | 2.7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 220pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | P-Channel |
Introduction
The third-generation power MOSFET utilizes advanced processing technology to achieve low on-resistance per unit silicon area. This advantage, combined with the fast switching speed and robust device design for which power MOSFETs are well known, provides designers with an extremely efficient and reliable device suitable for a wide range of applications. The DPAK package is designed for SMT using vapor phase, infrared, or wave soldering techniques. Straight-lead versions (IRFU, SiHFU series) are suitable for through-hole mounting applications. In typical SMT applications, power dissipation levels of up to 1.5 W can be achieved.
Features
- Advanced process technology
- Fully avalanche rated
- Surface mount (IRFR9214, SiHFR9214)
- Straight lead (IRFU9214, SiHFU9214)
- Fast switching
- RoHS compliant
- Halogen-free
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.9886 | $ 1.99 |
| 10+ | $ 1.961 | $ 19.61 |
| 30+ | $ 1.9415 | $ 58.25 |
| 100+ | $ 1.9236 | $ 192.36 |
Standard Packaging2000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | DPAK | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 75pF | |
| Current - Continuous Drain(Id) | 2.7A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 220pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | DPAK | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 75pF | |
| Current - Continuous Drain(Id) | 2.7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 220pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | P-Channel |
Introduction
The third-generation power MOSFET utilizes advanced processing technology to achieve low on-resistance per unit silicon area. This advantage, combined with the fast switching speed and robust device design for which power MOSFETs are well known, provides designers with an extremely efficient and reliable device suitable for a wide range of applications. The DPAK package is designed for SMT using vapor phase, infrared, or wave soldering techniques. Straight-lead versions (IRFU, SiHFU series) are suitable for through-hole mounting applications. In typical SMT applications, power dissipation levels of up to 1.5 W can be achieved.
Features
- Advanced process technology
- Fully avalanche rated
- Surface mount (IRFR9214, SiHFR9214)
- Straight lead (IRFU9214, SiHFU9214)
- Fast switching
- RoHS compliant
- Halogen-free
C143706 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HSU4P25 | HUASHUO | TO-252 | 2,460 | $ 0.3023 | ||
| DMP45H4D9HK3-13 | DIODES | TO-252 | 10 | $ 1.143 | ||
| IRFR9310PBF-VB | VBsemi Elec | TO-252 | 96 | $ 1.41 | ||
| CMD3P50A | Cmos | TO-252 | 2,115 | $0.3496 $0.368 | ||
| FQD3P50TM-VB | VBsemi Elec | TO-252 | 15 | $ 1.4922 | ||
| VBE2251K | VBsemi Elec | TO-252 | 50 | $1.3069 $1.3756 | ||
| FQD4P25TM_WS-VB | VBsemi Elec | TO-252 | 11 | $0.8670 $0.9126 | ||
| IRFR9214PBF | VISHAY | DPAK | 0 | $ 0.9119 | ||
| IRFR9214TRLPBF | VISHAY | DPAK | 0 | $ 0.3645 |