Central CZT5551 TR
| Manufacturer | |
| MPN | CZT5551 TR |
| LCSC Part # | C13636 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | TRANS NPN 160V 600mA SOT-223 |
| Datasheet | Central CZT5551 TR |
| RoHS Compliance | 1 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | SOT-223 | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Collector Cutoff | 50uA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 160V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 80 | |
| Current - Collector(Ic) | 600mA | |
| Pd - Power Dissipation | 2W | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | SOT-223 | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Collector Cutoff | 50uA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 160V |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 80 | |
| Current - Collector(Ic) | 600mA | |
| Pd - Power Dissipation | 2W | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | SOT-223 | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Collector Cutoff | 50uA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 160V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 80 | |
| Current - Collector(Ic) | 600mA | |
| Pd - Power Dissipation | 2W | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | SOT-223 | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Collector Cutoff | 50uA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 160V |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 80 | |
| Current - Collector(Ic) | 600mA | |
| Pd - Power Dissipation | 2W | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.
C13636 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
