ISSI IS46TR16640ED-15HBLA2

Manufacturer	ISSIAsian Brands
MPN	IS46TR16640ED-15HBLA2
LCSC Part #	C1352021
Packaging	TWBGA-96(9x13)
Customer #
Key Attributes	1Gbit 667MHz DDR3 SDRAM TWBGA-96(9x13) Memory RoHS
Datasheet	ISSI IS46TR16640ED-15HBLA2
RoHS Compliance	1 documents available
Alternative Parts	5

Products Specifications

All

Type	Description
Category	Integrated Circuits (ICs)/Memory/Memory
Manufacturer	ISSI
Packaging	TWBGA-96(9x13)
Operating Temperature	-40℃~+105℃
Features	Auto self-refresh;Auto precharge function;Asynchronous reset function;Write leveling function;Dynamic on-chip termination;ZQ calibration function;On-chip error correction code;Data mask function
Refresh Current	-
Memory Size	1Gbit
Voltage - Supply	1.425V~1.575V;-
Clock Frequency	667MHz
Memory Format	DDR3 SDRAM

Type	Description
Category	Integrated Circuits (ICs)/Memory/Memory
Manufacturer	ISSI
Packaging	TWBGA-96(9x13)
Operating Temperature	-40℃~+105℃
Features	Auto self-refresh;Auto precharge function;Asynchronous reset function;Write leveling function;Dynamic on-chip termination;ZQ calibration function;On-chip error correction code;Data mask function

AI Translation

Standard Voltage: VDD and V_DDO = 1.5 V ± 0.075 V
High speed data transfer rates with system frequency up to 800 MHz
8 internal banks for concurrent operation
8n-bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL - 1, CL - 2
Programmable CAS WRITE latency (CWL) based on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT)
Single bit error correction (per 64 - bits)
Refresh Interval: 7.8 μs (8192 cycles/64 ms) TC = -40 ℃ to 85 ℃; 3.9 μs (8192 cycles/32 ms) Tc = 85 ℃ to 105 ℃; 1.95 μs (8192 cycles/16 ms) TC = 105 ℃ to 125 ℃
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off - Chip Driver Impedance Adjustment)
Dynamic ODT (On - Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling
Operating temperature: Automotive, A1 TC = -40 ℃ to +95 ℃; Automotive, A2 TC = -40 ℃ to +105 ℃; Automotive, A3 (Tc = -40 ℃ to +125 ℃)

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Qty	Unit Price(Reference Only)	Total Amount
1+	$ 13.8635	$ 13.86
200+	$ 5.3654	$ 1073.08
500+	$ 5.1772	$ 2588.60
1,000+	$ 5.0839	$ 5083.90
Standard Packaging190/Full Tray

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All

Type	Description
Category	Integrated Circuits (ICs)/Memory/Memory
Manufacturer	ISSI
Packaging	TWBGA-96(9x13)
Operating Temperature	-40℃~+105℃
Features	Auto self-refresh;Auto precharge function;Asynchronous reset function;Write leveling function;Dynamic on-chip termination;ZQ calibration function;On-chip error correction code;Data mask function
Refresh Current	-
Memory Size	1Gbit
Voltage - Supply	1.425V~1.575V;-
Clock Frequency	667MHz
Memory Format	DDR3 SDRAM

Type	Description
Category	Integrated Circuits (ICs)/Memory/Memory
Manufacturer	ISSI
Packaging	TWBGA-96(9x13)
Operating Temperature	-40℃~+105℃
Features	Auto self-refresh;Auto precharge function;Asynchronous reset function;Write leveling function;Dynamic on-chip termination;ZQ calibration function;On-chip error correction code;Data mask function

AI Translation

Standard Voltage: VDD and V_DDO = 1.5 V ± 0.075 V
High speed data transfer rates with system frequency up to 800 MHz
8 internal banks for concurrent operation
8n-bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL - 1, CL - 2
Programmable CAS WRITE latency (CWL) based on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT)
Single bit error correction (per 64 - bits)
Refresh Interval: 7.8 μs (8192 cycles/64 ms) TC = -40 ℃ to 85 ℃; 3.9 μs (8192 cycles/32 ms) Tc = 85 ℃ to 105 ℃; 1.95 μs (8192 cycles/16 ms) TC = 105 ℃ to 125 ℃
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off - Chip Driver Impedance Adjustment)
Dynamic ODT (On - Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling
Operating temperature: Automotive, A1 TC = -40 ℃ to +95 ℃; Automotive, A2 TC = -40 ℃ to +105 ℃; Automotive, A3 (Tc = -40 ℃ to +125 ℃)

MPN	Manufacturer	Alternative Type	Packaging	Availability	Unit Price
IS43TR16640C-125JBLI	ISSI	Similar	BGA-96(9x13)	191	$ 10.3515
IS46TR16640A-15GBLA2-TR	ISSI	Similar	96-TWBGA (9x13)	0	$ 20.8293
IS46TR16640A-15GBLA2	ISSI	Similar	96-TWBGA (9x13)	0	$ 23.1547
IS46TR16640ED-125KBLA2-TR	ISSI	Similar	TWBGA-96(9x13)	0	$ 18.1995
IS46TR16640A-125JBLA2	ISSI	Similar	96-TWBGA (9x13)	0	$ 27.3907