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NCE NCE55P30K

Manufacturer
NCEAsian Brands
MPN
NCE55P30K
LCSC Part #
C130103
Packaging
TO-252-2L
Customer #
Key Attributes
MOSFET P-CH 55V 30A TO-252-2L
DatasheetNCE NCE55P30K
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNCE
PackagingTO-252-2L
Output Capacitance(Coss)240pF
Ciss-Input Capacitance3.5nF
Pd - Power Dissipation65W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage55V
Current - Continuous Drain(Id)30A
Reverse Transfer Capacitance (Crss)153pF
RDS(on)40mΩ@10V
Number1 P-Channel
Gate Charge(Qg)56nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))4V
TypeP-Channel
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Introduction

AI Translation

NCE55P30K utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = -55V, ID = -30A
  • RDS(ON) < 40 mΩ at VGS = -10V
  • High-density cell design for ultra-low RDS(ON)
  • Fully characterized avalanche voltage and current ratings
  • Excellent stability and consistency under high EAS
  • Superior package with excellent thermal dissipation

Applications

AI Translation
  • Power switch applications
  • Hard switching and high-frequency circuits
  • Uninterruptible power supplies