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onsemi FDC6306P
| Manufacturer | |
| MPN | FDC6306P |
| LCSC Part # | C124461 |
| Packaging | SuperSOT-6 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 1.9A SuperSOT-6 |
| Datasheet | onsemi FDC6306P |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 127pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.9A | |
| RDS(on) | 170mΩ@4.5V | |
| Pd - Power Dissipation | 960mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | P-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 441pF | |
| Gate Charge(Qg) | 4.2nC@4.5V | |
| Vgs | ±8V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 127pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.9A | |
| RDS(on) | 170mΩ@4.5V | |
| Pd - Power Dissipation | 960mW |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | P-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 441pF | |
| Gate Charge(Qg) | 4.2nC@4.5V | |
| Vgs | ±8V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
AI Translation
- RDS(ON) = 0.170 Ω @ VGS = -4.5 V
- RDS(ON) = 0.250 Ω @ VGS = -2.5 V
- Low gate charge (3 nC typical).
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON).
- SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Applications
AI Translation
- Load switch
- Battery protection
- Power management
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In-Stock: 2,570
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Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5289 | $ 0.53 |
| 10+ | $ 0.4134 | $ 4.13 |
| 30+ | $ 0.3645 | $ 10.94 |
| 100+ | $ 0.3027 | $ 30.27 |
| 500+ | $ 0.275 | $ 137.50 |
| 1,000+ | $ 0.2588 | $ 258.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 127pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.9A | |
| RDS(on) | 170mΩ@4.5V | |
| Pd - Power Dissipation | 960mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | P-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 441pF | |
| Gate Charge(Qg) | 4.2nC@4.5V | |
| Vgs | ±8V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 127pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.9A | |
| RDS(on) | 170mΩ@4.5V | |
| Pd - Power Dissipation | 960mW |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | P-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 441pF | |
| Gate Charge(Qg) | 4.2nC@4.5V | |
| Vgs | ±8V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
AI Translation
- RDS(ON) = 0.170 Ω @ VGS = -4.5 V
- RDS(ON) = 0.250 Ω @ VGS = -2.5 V
- Low gate charge (3 nC typical).
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON).
- SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Applications
AI Translation
- Load switch
- Battery protection
- Power management
C124461 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FDC6312P | onsemi | SuperSOT-6 | 326 | $ 0.5094 | ||
| FDC6310P | onsemi | SuperSOT-6 | 100 | $ 0.9602 | ||
| HL6801 | R+O | SOT-23-6L | 1,385 | $ 0.0857 | ||
| DO2301BD | DOINGTER | SOT-23-6D | 1,130 | $ 0.0436 | ||
| WST2011 | Winsok Semicon | SOT-23-6L | 3,000 | $ 0.2585 | ||
| BSL308PEH6327 | Infineon | TSOP-6 | 20 | $ 0.4647 | ||
| SQ3989EV-T1_GE3 | VISHAY | TSOP-6 | 23 | $ 1.0512 | ||
| HSW6811 | HUASHUO | SOT-23-6L | 650 | $ 0.0578 | ||
| SQ3985EV-T1_GE3 | VISHAY | TSOP-6-1.5mm | 0 | $ 0.866 | ||
| FDC6308P | onsemi | SuperSOT-6 | 0 | $ 0.5864 |