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RENESAS RJH60F7DPQ-A0#T0 product image
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RENESAS RJH60F7DPQ-A0#T0

Manufacturer
RENESAS
MPN
RJH60F7DPQ-A0#T0
LCSC Part #
C118764
Packaging
TO-247A
Customer #
Key Attributes
328.9W 50A 600V TO-247A Single IGBTs RoHS
DatasheetRENESAS RJH60F7DPQ-A0#T0
RoHS Compliance1 documents available
Alternative Parts1
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerRENESAS
PackagingTO-247A
Td(off)142ns
Pd - Power Dissipation328.9W
Td(on)63ns
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)83pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-
Vce Saturation(VCE(sat))1.75V@50A,15V
Collector Cut-Off Current (Ices)100uA
Reverse Recovery Time(trr)90ns
Switching Energy(Eoff)-
Turn-On Energy (Eon)-
Input Capacitance(Cies)4.7nF
Gate Charge(Qg)-
Output Capacitance(Coes)198pF
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Features

AI Translation
  • Low collector to emitter saturation voltage ΔVCE(sat)=1.35 V typ. (at IC=50 A, VGE=15 V, Ta=25°C)
  • Built in fast recovery diode in one package
  • Trench gate and thin wafer technology
  • High speed switching tf=74 ns typ. (at IC=30 A, VCE=400 V, VGE=15 V, Rg=5 Ω, Ta=25°C, inductive load)