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ST STD25N10F7

Manufacturer
MPN
STD25N10F7
LCSC Part #
C114860
Packaging
TO-252(DPAK)
Customer #
Key Attributes
MOSFET N-CH 100V 25A TO-252(DPAK)
DatasheetST STD25N10F7
RoHS Compliance3 documents available
Alternative Parts10
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 2,429
2,429 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.968$ 0.97
10+$ 0.8124$ 8.12
30+$ 0.7338$ 22.01
100+$ 0.6568$ 65.68
500+$ 0.6109$ 305.45
1,000+$ 0.588$ 588.00
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-252(DPAK)
Output Capacitance(Coss)215pF
Pd - Power Dissipation40W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage100V
Current - Continuous Drain(Id)25A
Gate Threshold Voltage (Vgs(th))4.5V
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)35mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)920pF
Gate Charge(Qg)14nC@10V
Vgs±20V
TypeN-Channel

Introduction

AI Translation

These devices utilize the 7th generation of design rules of ST’s proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Features

AI Translation
  • Ultra low on-resistance
  • 100% avalanche tested

Applications

AI Translation
  • Switching applications

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
LWT1H36A4Lewa MicroTO-2522,470$ 0.1826
HSU0018AHUASHUOTO-252167$ 0.5712
FDD390N15AonsemiTO-252(DPAK)1,613$ 1.2402
STD105N10F7AG-VBVBsemi ElecTO-2524$1.1177 $1.1765
IPD33CN10NGInfineonTO-252-30$ 1.0382
VBGE1101NVBsemi ElecTO-2520$ 1.0443
VBGE1256NVBsemi ElecTO-2520$ 2.2906
DMT10H025SK3-13DIODESTO-252(DPAK)0$ 0.6157
STD26NF10STTO-252-2(DPAK)0$ 1.5653
NTD6414ANT4GonsemiTO-2520$ 0.7858