ST STD25N10F7
| Manufacturer | |
| MPN | STD25N10F7 |
| LCSC Part # | C114860 |
| Packaging | TO-252(DPAK) |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 25A TO-252(DPAK) |
| Datasheet | ST STD25N10F7 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 215pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 25A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 215pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 25A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Features
AI Translation
- Ultra low on-resistance
- 100% avalanche tested
Applications
AI Translation
- Switching applications
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In-Stock: 2,429
2,429 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.968 | $ 0.97 |
| 10+ | $ 0.8124 | $ 8.12 |
| 30+ | $ 0.7338 | $ 22.01 |
| 100+ | $ 0.6568 | $ 65.68 |
| 500+ | $ 0.6109 | $ 305.45 |
| 1,000+ | $ 0.588 | $ 588.00 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 215pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 25A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 215pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 25A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Features
AI Translation
- Ultra low on-resistance
- 100% avalanche tested
Applications
AI Translation
- Switching applications
C114860 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| LWT1H36A4 | Lewa Micro | TO-252 | 2,470 | $ 0.1826 | ||
| HSU0018A | HUASHUO | TO-252 | 167 | $ 0.5712 | ||
| FDD390N15A | onsemi | TO-252(DPAK) | 1,613 | $ 1.2402 | ||
| STD105N10F7AG-VB | VBsemi Elec | TO-252 | 4 | $1.1177 $1.1765 | ||
| IPD33CN10NG | Infineon | TO-252-3 | 0 | $ 1.0382 | ||
| VBGE1101N | VBsemi Elec | TO-252 | 0 | $ 1.0443 | ||
| VBGE1256N | VBsemi Elec | TO-252 | 0 | $ 2.2906 | ||
| DMT10H025SK3-13 | DIODES | TO-252(DPAK) | 0 | $ 0.6157 | ||
| STD26NF10 | ST | TO-252-2(DPAK) | 0 | $ 1.5653 | ||
| NTD6414ANT4G | onsemi | TO-252 | 0 | $ 0.7858 |



