Alliance Memory AS4C256M16D4-83BCN
| Manufacturer | |
| MPN | AS4C256M16D4-83BCN |
| LCSC Part # | C1137473 |
| Packaging | FBGA-96(7.5x13.5) |
| Customer # | |
| Key Attributes | 4Gbit 1.2GHz DDR4 SDRAM FBGA-96(7.5x13.5) Memory RoHS |
| Datasheet | Alliance Memory AS4C256M16D4-83BCN |
| Alternative Parts | 20 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Alliance Memory | |
| Packaging | FBGA-96(7.5x13.5) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Auto self-refresh;Auto precharge function;Asynchronous reset function;Write leveling function;CRC function;Dynamic on-chip termination;ZQ calibration function;Data mask function | |
| Refresh Current | - | |
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.14V~1.26V;- | |
| Clock Frequency | 1.2GHz | |
| Memory Format | DDR4 SDRAM |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Alliance Memory | |
| Packaging | FBGA-96(7.5x13.5) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Auto self-refresh;Auto precharge function;Asynchronous reset function;Write leveling function;CRC function;Dynamic on-chip termination;ZQ calibration function;Data mask function |
| Type | Description | |
|---|---|---|
| Refresh Current | - | |
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.14V~1.26V;- | |
| Clock Frequency | 1.2GHz | |
| Memory Format | DDR4 SDRAM |
Introduction
The DDR4 SDRAM is a high-speed dynamic random-access memory internally organized with eight-banks (2 bank groups each with 4 banks). The DDR4 SDRAM uses a 8n prefetch architecture to achieve high-speed operation. The 8n prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR4 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and eight corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins.
Features
- JEDEC Standard Compliant
- Fast clock rate: 1200/1333MHz
- Power supplies: - VDD & VDDQ = +1.2V ± 0.06V - VPP = +2.5V - 0.125V / +0.25V
- Operating temperature range: - Commercial: TC = 0 ~ 95℃ - Industrial: TC = -40 ~ 95℃
- Supports JEDEC clock jitter specification
- Bidirectional differential data strobe, DQS & DQS#
- Differential Clock, CK & CK#
- 8 internal banks: 2 groups of 4 banks each
- Separated IO gating structures by Bank Group
- 8n-bit prefetch architecture
- Precharge & Active power down
- Auto Refresh and Self Refresh
- Low-power auto self refresh (LPASR)
- Self Refresh Abort
- Fine Granularity Refresh
- Dynamic ODT (RTT_PARK & RTT_Nom & RTT_WR)
- Write Leveling
- DQ Training via MPR
- Programmable preamble is supported both of 1tCK and 2tCK mode
- Command/Address (CA) Parity
- Data bus write cyclic redundancy check (CRC)
- Boundary Scan Mode
- Internal VREFDQ Training
- Read Preamble Training
- Control Gear Down Mode
- Per DRAM Addressability (PDA)
- Output Driver Impedance Control
- Dynamic on-die termination (ODT)
- Input Data Mask (DM) and Data Bus Inversion (DBI)
- ZQ Calibration
- Command/Address latency (CAL)
- Asynchronous Reset
- DLL enable/disable
- Burst Length (BL8/BC4/BC4 or 8 on the fly)
- Burst type: Sequential / Interleave
- CAS Latency (CL)
- CAS Write Latency (CWL)
- Additive Latency (AL): 0, CL - 1, CL - 2
- Average refresh period - 8192 cycles/64ms (7.8us at -40℃ ≤ TC ≤ +85℃) - 8192 cycles/32ms (3.9us at +85℃ ≤ TC ≤ +95℃)
- Data Interface: Pseudo Open Drain (POD)
- RoHS compliant
- Hard post package repair (hPPR)
- Soft post package repair (sPPR)
- Package: Pb Free and Halogen Free - 96-ball 7.5x13.5x1.2mm FBGA
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 6.332 | $ 6.33 |
| 200+ | $ 2.4502 | $ 490.04 |
| 500+ | $ 2.3642 | $ 1182.10 |
| 1,000+ | $ 2.3219 | $ 2321.90 |
Standard Packaging209/Full Tray | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Alliance Memory | |
| Packaging | FBGA-96(7.5x13.5) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Auto self-refresh;Auto precharge function;Asynchronous reset function;Write leveling function;CRC function;Dynamic on-chip termination;ZQ calibration function;Data mask function | |
| Refresh Current | - | |
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.14V~1.26V;- | |
| Clock Frequency | 1.2GHz | |
| Memory Format | DDR4 SDRAM |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Alliance Memory | |
| Packaging | FBGA-96(7.5x13.5) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Auto self-refresh;Auto precharge function;Asynchronous reset function;Write leveling function;CRC function;Dynamic on-chip termination;ZQ calibration function;Data mask function |
| Type | Description | |
|---|---|---|
| Refresh Current | - | |
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.14V~1.26V;- | |
| Clock Frequency | 1.2GHz | |
| Memory Format | DDR4 SDRAM |
Introduction
The DDR4 SDRAM is a high-speed dynamic random-access memory internally organized with eight-banks (2 bank groups each with 4 banks). The DDR4 SDRAM uses a 8n prefetch architecture to achieve high-speed operation. The 8n prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR4 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and eight corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins.
Features
- JEDEC Standard Compliant
- Fast clock rate: 1200/1333MHz
- Power supplies: - VDD & VDDQ = +1.2V ± 0.06V - VPP = +2.5V - 0.125V / +0.25V
- Operating temperature range: - Commercial: TC = 0 ~ 95℃ - Industrial: TC = -40 ~ 95℃
- Supports JEDEC clock jitter specification
- Bidirectional differential data strobe, DQS & DQS#
- Differential Clock, CK & CK#
- 8 internal banks: 2 groups of 4 banks each
- Separated IO gating structures by Bank Group
- 8n-bit prefetch architecture
- Precharge & Active power down
- Auto Refresh and Self Refresh
- Low-power auto self refresh (LPASR)
- Self Refresh Abort
- Fine Granularity Refresh
- Dynamic ODT (RTT_PARK & RTT_Nom & RTT_WR)
- Write Leveling
- DQ Training via MPR
- Programmable preamble is supported both of 1tCK and 2tCK mode
- Command/Address (CA) Parity
- Data bus write cyclic redundancy check (CRC)
- Boundary Scan Mode
- Internal VREFDQ Training
- Read Preamble Training
- Control Gear Down Mode
- Per DRAM Addressability (PDA)
- Output Driver Impedance Control
- Dynamic on-die termination (ODT)
- Input Data Mask (DM) and Data Bus Inversion (DBI)
- ZQ Calibration
- Command/Address latency (CAL)
- Asynchronous Reset
- DLL enable/disable
- Burst Length (BL8/BC4/BC4 or 8 on the fly)
- Burst type: Sequential / Interleave
- CAS Latency (CL)
- CAS Write Latency (CWL)
- Additive Latency (AL): 0, CL - 1, CL - 2
- Average refresh period - 8192 cycles/64ms (7.8us at -40℃ ≤ TC ≤ +85℃) - 8192 cycles/32ms (3.9us at +85℃ ≤ TC ≤ +95℃)
- Data Interface: Pseudo Open Drain (POD)
- RoHS compliant
- Hard post package repair (hPPR)
- Soft post package repair (sPPR)
- Package: Pb Free and Halogen Free - 96-ball 7.5x13.5x1.2mm FBGA
C1137473 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| RS256M16ZADD-75DT | Rayson | FBGA-96(7.5x13.5) | 4 | $ 26.7896 | ||
| AS4C256M16D4-83BCNTR | Alliance Memory | FBGA-96(7.5x13.5) | 0 | $ 19.0122 | ||
| EDY4016AABG-DR-F-R TR | micron | 96-FBGA (7.5x13.5) | 0 | $ 24.8011 | ||
| EDY4016AABG-DR-F-D | micron | 96-FBGA (7.5x13.5) | 0 | $ 29.9514 | ||
| AS4C256M16D4-75BCNTR | Alliance Memory | FBGA-96(7.5x13.5) | 0 | $ 21.728 | ||
| AS4C256M16D4-75BCN | Alliance Memory | FBGA-96(7.5x13.5) | 0 | $ 19.6635 | ||
| EDY4016AABG-GX-F-R TR | micron | 96-FBGA (7.5x13.5) | 0 | $ 31.8621 | ||
| EDY4016AABG-GX-F-D | micron | 96-FBGA (7.5x13.5) | 0 | $ 38.4797 | ||
| MT40A256M16LY-062E:F | micron | FBGA-96(7.5x13.5) | 0 | $ 11.8917 | ||
| EM6OE16NWAKA-07H | Etron Tech | FBGA-96(7.5x13.5) | 0 | $ 20.3737 | ||
| IS43QR16256B-083RBL-TR | ISSI | TWBGA-96(7.5x13.5) | 0 | $ 19.5836 | ||
| AS4C256M16D4-83BIN | Alliance Memory | FBGA-96(7.5x13.5) | 0 | $ 11.0637 | ||
| AS4C256M16D4-83BINTR | Alliance Memory | FBGA-96(7.5x13.5) | 0 | $ 21.0676 | ||
| IS46QR16256B-083RBLA1-TR | ISSI | TWBGA-96(7.5x13.5) | 0 | $ 26.7072 | ||
| AS4C256M16D4-75BINTR | Alliance Memory | FBGA-96(7.5x13.5) | 0 | $ 21.0676 | ||
| AS4C256M16D4-75BIN | Alliance Memory | FBGA-96(7.5x13.5) | 0 | $ 21.8083 | ||
| MT40A256M16LY-062E AAT:F TR | micron | FBGA-96(7.5x13.5) | 0 | $ 14.5401 | ||
| IS43QR16256B-075UBL-TR | ISSI | TWBGA-96(7.5x13.5) | 0 | $ 20.1618 | ||
| IS43QR16256B-075UBL | ISSI | TWBGA-96(7.5x13.5) | 0 | $ 27.119 | ||
| IS46QR16256B-083RBLA1 | ISSI | TWBGA-96(7.5x13.5) | 0 | $ 21.5423 |

