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onsemi BS170RoHS

Manufacturer
onsemi
MPN
BS170
LCSC Part #
C111691
Packaging
TO-92
Customer #
Key Attributes
MOSFET N-CH 60V 500mA TO-92
Datasheetpdf icononsemi BS170
In-Stock: 4,275
4,275 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.1942$ 0.97
50+$ 0.155$ 7.75
150+$ 0.1382$ 20.73
1,000+$ 0.1172$ 117.20
2,000+$ 0.1078$ 215.60
5,000+$ 0.1022$ 511.00
Standard Packaging1000/Full Bag
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-92
Operating Temperature-55℃~+150℃
Drain to Source Voltage60V
Output Capacitance(Coss)17pF
Current - Continuous Drain(Id)500mA
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation830mW
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)24pF
Gate Charge(Qg)-
TypeN-Channel
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Introduction

AI Translation

These N-channel enhancement mode field-effect transistors are fabricated using proprietary high cell density DMOS technology. These products are designed to minimize on-resistance while providing robust, reliable and fast switching performance. They can be used in most applications requiring DC current up to 500mA. These products are particularly suitable for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.

Features

AI Translation
  • High-density cell design for low R<sub>DS(ON)</sub>
  • Voltage-controlled small-signal switch
  • Robust and reliable
  • High saturation current capability

Applications

AI Translation
  • Small servo motor control - Power MOSFET gate drivers - Other switching applications