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onsemi BS170
| Manufacturer | |
| MPN | BS170 |
| LCSC Part # | C111691 |
| Packaging | TO-92 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 500mA TO-92 |
| Datasheet | onsemi BS170 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-92 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 17pF | |
| Current - Continuous Drain(Id) | 500mA | |
| Ciss-Input Capacitance | 24pF | |
| Pd - Power Dissipation | 830mW | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-92 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 17pF | |
| Current - Continuous Drain(Id) | 500mA | |
| Ciss-Input Capacitance | 24pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 830mW | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel |
Introduction
These N-channel enhancement mode field-effect transistors are fabricated using proprietary high cell density DMOS technology. These products are designed to minimize on-resistance while providing robust, reliable and fast switching performance. They can be used in most applications requiring DC current up to 500mA. These products are particularly suitable for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
Features
- High-density cell design for low R<sub>DS(ON)</sub>
- Voltage-controlled small-signal switch
- Robust and reliable
- High saturation current capability
Applications
- Small servo motor control - Power MOSFET gate drivers - Other switching applications
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-92 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 17pF | |
| Current - Continuous Drain(Id) | 500mA | |
| Ciss-Input Capacitance | 24pF | |
| Pd - Power Dissipation | 830mW | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-92 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 17pF | |
| Current - Continuous Drain(Id) | 500mA | |
| Ciss-Input Capacitance | 24pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 830mW | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel |
Introduction
These N-channel enhancement mode field-effect transistors are fabricated using proprietary high cell density DMOS technology. These products are designed to minimize on-resistance while providing robust, reliable and fast switching performance. They can be used in most applications requiring DC current up to 500mA. These products are particularly suitable for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
Features
- High-density cell design for low R<sub>DS(ON)</sub>
- Voltage-controlled small-signal switch
- Robust and reliable
- High saturation current capability
Applications
- Small servo motor control - Power MOSFET gate drivers - Other switching applications
C111691 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |