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ST STP26NM60N

Manufacturer
ST
MPN
STP26NM60N
LCSC Part #
C110593
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 600V 20A TO-220
DatasheetST STP26NM60N
RoHS Compliance3 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Output Capacitance(Coss)115pF
Ciss-Input Capacitance1.8nF
Pd - Power Dissipation140W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Current - Continuous Drain(Id)20A
Reverse Transfer Capacitance (Crss)6pF
RDS(on)165mΩ@10V
Number1 N-channel
Gate Charge(Qg)60nC@10V
Vgs±30V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Introduction

AI Translation

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features

AI Translation
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications

AI Translation
  • Switching applications