RENESAS F6102NTGK

The F6102 is an 8-element receiver silicon IC designed using a SiGe BiCMOS process for Ka-Band SATCOM phased array applications. The core IC has 6-bit phase control coupled with 30dB gain control on each channel to achieve fine beam steering and gain compensation between radiating elements. The device has 16dB nominal electric gain and -30dBm IP1dB. The core chip achieves an RMS phase error of 3° and RMS gain error of 0.3dB over the frequency of operation. The typical total power consumption is 0.32W (40mW per channel).

• 17.5GHz to 21.5GHz operation
• 8 radiation channels 6-bit phase control
• 20ns typical gain settling time
• 20ns typical phase settling time
• 3° typical RMS phase error
• 0.3dB typical RMS gain error
• 30dB gain attenuation range
• 5-bit IC address
• Integrated proportional-to-absolute temperature (PTAT) sensor with external biasing
• -40°C to +95°C internal temperature sensor
• Programmable 4-state on-chip memory
• Supply voltage: +2.1V to +2.5V
• -40°C to +95°C ambient operating temperature range
• 27°C typical ambient operating temperature
• 5mm x 5mm, 40-QFN package

• Ka-Band SATCOM
• Beam Steering Test and Measurement