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onsemi FOD3182TV

Manufacturer
onsemi
MPN
FOD3182TV
LCSC Part #
C899268
Packaging
DIP-8
Customer #
Key Attributes
3A 5V 10V~30V 1.43V DC DIP-8 Isolators - Gate Drivers RoHS
Datasheetonsemi FOD3182TV
RoHS Compliance4 documents available
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.5964$ 1.60
200+$ 0.6186$ 123.72
500+$ 0.5971$ 298.55
1,000+$ 0.5864$ 586.40
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Products Specifications

All
TypeDescription
CategoryIsolators/Isolators - Gate Drivers
Manufactureronsemi
PackagingDIP-8
Power Dissipation295mW
Output Current3A
Data Rate-
Operating Temperature-40℃~+100℃
Output voltage-
Reverse Voltage5V
Voltage - Supply10V~30V
Forward Current(If)16mA
CMTI(kV/us)50kV/us
Number of Channels1
Propagation Delay(tpd)210ns;210ns
Input threshold current7.5mA
Voltage - Forward(Vf)1.43V
Isolation Voltage(Vrms)5kV
Input TypeDC
FeaturesUnder-voltage lockout
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Introduction

AI Translation

The FOD3182 is a 3A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a aluminium gallium arsenide (AlGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETS used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC/DC converters. The device is packaged in an 8-pin dual in-line housing compatible with 260°C reflow processes for lead free solder compliance.

Features

AI Translation
  • High noise immunity characterized by 50kV/µs (Typ.) common mode rejection @CMRR (Common Mode Rejection Ratio) = 2,000
  • Guaranteed operating temperature range of -40℃ to +100℃
  • 3A peak output current
  • Fast switching speed – 210ns max. propagation delay – 65ns max pulse width distortion
  • Fast output rise/fall time – Offers lower dynamic power dissipation
  • 250kHz maximum switching speed
  • Wide VDD operating range: 10V to 30V
  • Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output)
  • 5000Vrms, 1 minute isolation
  • Under voltage lockout protection (UVLO) with hysteresis – optimized for driving MOSFETs
  • Minimum creepage distance of 8.0mm
  • Minimum clearance distance of 10mm to 16mm (option TV or TSV)
  • Minimum insulation thickness of 0.5mm
  • UL and VDE*
  • 1,414 peak working insulation voltage (VIORM)

Applications

AI Translation
  • Plasma Display Panel
  • High performance DC/DC convertor
  • High performance switch mode power supply
  • High performance uninterruptible power supply
  • Isolated Power MOSFET gate drive