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onsemi NVMJS1D4N06CLTWG
| Manufacturer | |
| MPN | NVMJS1D4N06CLTWG |
| LCSC Part # | C894176 |
| Packaging | LFPAK-8 |
| Customer # | |
| Key Attributes | 180W 60V 262A 2V 1.3mΩ@10V 1 N-channel N-Channel LFPAK-8 Single FETs, MOSFETs RoHS |
| Datasheet | onsemi NVMJS1D4N06CLTWG |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | LFPAK-8 | |
| Output Capacitance(Coss) | 3.5nF | |
| Pd - Power Dissipation | 180W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 262A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 57pF | |
| RDS(on) | 1.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.43nF | |
| Gate Charge(Qg) | 103nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | LFPAK-8 | |
| Output Capacitance(Coss) | 3.5nF | |
| Pd - Power Dissipation | 180W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 262A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 57pF | |
| RDS(on) | 1.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.43nF | |
| Gate Charge(Qg) | 103nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Introduction
AI Translation
-40 V, 10.4 mΩ, -77 A P-channel automotive power MOSFET designed for compact, high-efficiency designs with superior thermal dissipation. AEC-Q101 qualified with PPAP documentation available for automotive applications.
Features
AI Translation
- Compact package (5x6 mm) for space-constrained designs
- Low on-resistance RDS(on) minimizes conduction losses
- Low gate charge QG and capacitance minimize driving losses
- Industry-standard LFPAK8 package
- AEC-Q101 qualified, PPAP documentation available
- Lead-free, RoHS compliant
Applications
AI Translation
- Reverse battery protection - Load switch - Automotive headlights - Automotive body controller
In-Stock: 25
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Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 5.9835 | $ 5.98 |
| 10+ | $ 5.8893 | $ 58.89 |
| 30+ | $ 5.8276 | $ 174.83 |
| 100+ | $ 5.7658 | $ 576.58 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | LFPAK-8 | |
| Output Capacitance(Coss) | 3.5nF | |
| Pd - Power Dissipation | 180W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 262A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 57pF | |
| RDS(on) | 1.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.43nF | |
| Gate Charge(Qg) | 103nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | LFPAK-8 | |
| Output Capacitance(Coss) | 3.5nF | |
| Pd - Power Dissipation | 180W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 262A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 57pF | |
| RDS(on) | 1.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.43nF | |
| Gate Charge(Qg) | 103nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
-40 V, 10.4 mΩ, -77 A P-channel automotive power MOSFET designed for compact, high-efficiency designs with superior thermal dissipation. AEC-Q101 qualified with PPAP documentation available for automotive applications.
Features
AI Translation
- Compact package (5x6 mm) for space-constrained designs
- Low on-resistance RDS(on) minimizes conduction losses
- Low gate charge QG and capacitance minimize driving losses
- Industry-standard LFPAK8 package
- AEC-Q101 qualified, PPAP documentation available
- Lead-free, RoHS compliant
Applications
AI Translation
- Reverse battery protection - Load switch - Automotive headlights - Automotive body controller
C894176 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NTMJS1D4N06CLTWG | onsemi | LFPAK-8 | 10 | $ 13.3545 | ||
| NVMJS1D6N06CLTWG | onsemi | LFPAK-8 | 0 | $ 3.3003 |