onsemi MMUN2233LT1G
| Manufacturer | |
| MPN | MMUN2233LT1G |
| LCSC Part # | C86932 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | TRANS PREBIAS 50V SOT-23 |
| Datasheet | onsemi MMUN2233LT1G |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 0.1 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 0.1 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Introduction
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0486 | $ 0.49 |
| 100+ | $ 0.038 | $ 3.80 |
| 300+ | $ 0.0327 | $ 9.81 |
| 3,000+ | $ 0.0287 | $ 86.10 |
| 6,000+ | $ 0.0256 | $ 153.60 |
| 9,000+ | $ 0.024 | $ 216.00 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 0.1 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 0.1 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Introduction
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
C86932 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SMMUN2233LT1G | onsemi | SOT-23 | 3,090 | $ 0.0432 | ||
| MMUN2216LT1G | onsemi | SOT-23 | 4,815 | $ 0.0935 | ||
| MMUN2233LT1G-GK | GOODWORK | SOT-23 | 2,420 | $0.0118 $0.0236 | ||
| DTC143ZCA | TWGMC | SOT-23 | 34,390 | $0.0213 $0.0236 | ||
| MUN2233T1G | onsemi | SC-59 | 0 | $ 0.0481 | ||
| SMMUN2216LT1G | onsemi | SOT-23 | 0 | $ 0.0792 | ||
| PDTC143ZT,235 | Nexperia | SOT-23 | 0 | $ 0.0252 | ||
| SMUN2216T1G | onsemi | SC-59 | 0 | $ 0.0315 | ||
| NSVMMUN2235LT1G | onsemi | SOT-23 | 0 | $ 0.2679 | ||
| DDTC143ZCA-7-F | DIODES | SOT-23 | 0 | $ 0.0472 |



