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WUXI UNIGROUP MICRO TPD80R900M

Manufacturer
WUXI UNIGROUP MICROAsian Brands
MPN
TPD80R900M
LCSC Part #
C691658
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 800V 6A TO-252
DatasheetWUXI UNIGROUP MICRO TPD80R900M
RoHS Compliance1 documents available
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.9196$ 0.92
10+$ 0.7652$ 7.65
30+$ 0.6873$ 20.62
100+$ 0.6109$ 61.09
500+$ 0.5654$ 282.70
1,000+$ 0.541$ 541.00
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerWUXI UNIGROUP MICRO
PackagingTO-252
Operating Temperature-55℃~+150℃
Drain to Source Voltage800V
Current - Continuous Drain(Id)6A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation63W
Reverse Transfer Capacitance (Crss@Vds)0.31pF
RDS(on)790mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)528.6pF
Gate Charge(Qg)13nC@10V
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Introduction

AI Translation

Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler.