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VISHAY SIHH21N65E-T1-GE3 product image
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VISHAY SIHH21N65E-T1-GE3

Manufacturer
VISHAY
MPN
SIHH21N65E-T1-GE3
LCSC Part #
C6816675
Packaging
-
Customer #
Key Attributes
650V 12.8A 2V 156W 170mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS
DatasheetVISHAY SIHH21N65E-T1-GE3
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QtyUnit Price(Reference Only)Total Amount
1+$ 9.3613$ 9.36
200+$ 3.7358$ 747.16
500+$ 3.6115$ 1805.75
1,000+$ 3.5494$ 3549.40
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
Packaging-
Operating Temperature-55℃~+150℃
Drain to Source Voltage650V
Current - Continuous Drain(Id)12.8A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)170mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
Gate Charge(Qg)99nC@10V
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Features

AI Translation
  • Fully lead-free (Pb) device
  • Low figure of merit (FOM) Ron × Qg
  • Low input capacitance (Ciss)
  • Reduced switching and conduction losses
  • Ultra-low gate charge (Qg)
  • Avalanche energy rated (UIS)
  • Kelvin connection for reduced gate noise

Applications

AI Translation
  • Server and telecom power supplies
  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) supplies
  • Lighting
  • High Intensity Discharge (HID) lamps
  • Fluorescent lamp ballast lighting
  • Industrial
  • Welding
  • Induction heating
  • Motor drives
  • Battery chargers
  • Renewable energy
  • Solar (photovoltaic inverters)