Infineon IPW60R160P6FKSA1
| Manufacturer | |
| MPN | IPW60R160P6FKSA1 |
| LCSC Part # | C672202 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | 176W 600V 4V 144mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| Datasheet | Infineon IPW60R160P6FKSA1 |
| RoHS Compliance | 1 documents available |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Output Capacitance(Coss) | 89pF | |
| Pd - Power Dissipation | 176W | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | - | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 144mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.08nF | |
| Gate Charge(Qg) | 44nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Output Capacitance(Coss) | 89pF | |
| Pd - Power Dissipation | 176W | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | - |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 144mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.08nF | |
| Gate Charge(Qg) | 44nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The CoolMOS P6 series combines the expertise of a leading SJ MOSFET supplier with best-in-class innovation. The offered devices deliver all the advantages of fast-switching SJ MOSFETs without sacrificing ease of use. Ultra-low switching and conduction losses enable switching applications to be more efficient, compact, lightweight, and thermally optimized.
Features
- Enhanced MOSFET dv/dt robustness
- Ultra-low FOM (Rdson×Qg and Eoss) for minimal switching losses
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- JEDEC (J-STD20 and JESD22) compliant for industrial-grade applications
Applications
- PFC stage circuits - Hard-switching PWM stage circuits - Resonant switching stage circuits, e.g. for PC power supplies, adapters, LCD and plasma TVs, lighting, servers, telecom and UPS
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.6869 | $ 2.69 |
| 200+ | $ 1.0401 | $ 208.02 |
| 500+ | $ 1.0041 | $ 502.05 |
| 1,000+ | $ 0.9853 | $ 985.30 |
Standard Packaging240/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Output Capacitance(Coss) | 89pF | |
| Pd - Power Dissipation | 176W | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | - | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 144mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.08nF | |
| Gate Charge(Qg) | 44nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Output Capacitance(Coss) | 89pF | |
| Pd - Power Dissipation | 176W | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | - |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 144mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.08nF | |
| Gate Charge(Qg) | 44nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The CoolMOS P6 series combines the expertise of a leading SJ MOSFET supplier with best-in-class innovation. The offered devices deliver all the advantages of fast-switching SJ MOSFETs without sacrificing ease of use. Ultra-low switching and conduction losses enable switching applications to be more efficient, compact, lightweight, and thermally optimized.
Features
- Enhanced MOSFET dv/dt robustness
- Ultra-low FOM (Rdson×Qg and Eoss) for minimal switching losses
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- JEDEC (J-STD20 and JESD22) compliant for industrial-grade applications
Applications
- PFC stage circuits - Hard-switching PWM stage circuits - Resonant switching stage circuits, e.g. for PC power supplies, adapters, LCD and plasma TVs, lighting, servers, telecom and UPS
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

