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VISHAY SQJQ100EL-T1_GE3
| Manufacturer | |
| MPN | SQJQ100EL-T1_GE3 |
| LCSC Part # | C6495672 |
| Packaging | - |
| Customer # | |
| Key Attributes | 40V 200A 1.5V 50W 1.2mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS |
| Datasheet | VISHAY SQJQ100EL-T1_GE3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 200A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 950pF | |
| RDS(on) | 1.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 14.5nF | |
| Gate Charge(Qg) | 220nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 200A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 950pF | |
| RDS(on) | 1.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 14.5nF | |
| Gate Charge(Qg) | 220nC@10V |
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Features
AI Translation
- Trench field-effect power MOSFET
- AEC-Q101 qualified
- 100% Rg and UIS tested
- Fully lead-free device
- Only 1.9 mm thickness
- RoHS compliant
- Halogen-free
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.6039 | $ 3.60 |
| 200+ | $ 1.4383 | $ 287.66 |
| 500+ | $ 1.3898 | $ 694.90 |
| 1,000+ | $ 1.367 | $ 1367.00 |
Standard Packaging2000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 200A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 950pF | |
| RDS(on) | 1.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 14.5nF | |
| Gate Charge(Qg) | 220nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 200A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 950pF | |
| RDS(on) | 1.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 14.5nF | |
| Gate Charge(Qg) | 220nC@10V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Trench field-effect power MOSFET
- AEC-Q101 qualified
- 100% Rg and UIS tested
- Fully lead-free device
- Only 1.9 mm thickness
- RoHS compliant
- Halogen-free
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |