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MICROCHIP MCP14A1202T-E/MNY

Fabricante
N.º de pieza fab.
MCP14A1202T-E/MNY
Nº LCSC
C622985
Emb.
TDFN-8-EP(2x3)
Número de Cliente
Atrib. clave
4.5V~18V 12A 12A TDFN-8-EP(2x3) Gate Drivers RoHS
Hoja de DatosMICROCHIP MCP14A1202T-E/MNY
Cumplimiento RoHS2 documentos disponibles
Agotado
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Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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Cant.Prec. unit.(Solo como referencia)Importo total
1+$ 1.9016$ 1.90
200+$ 0.7363$ 147.26
500+$ 0.71$ 355.00
1,000+$ 0.6977$ 697.70
Encapsulado Estándar3300/Full Reel
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Especificaciones del Producto

Todo
TipoDescripción
CategoríaIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
FabricanteMICROCHIP
Emb.TDFN-8-EP(2x3)
Input Logic Level - Low-
Low Level Delay Time-
High Level Delay Time-
Quiescent Current360uA
Input Logic Level - High-
Voltage - Supply4.5V~18V
Driven Configuration-
Current - Output Low(IOL)12A
Rise Time25ns
Fall Time25ns
FeaturesEnable shutdown;Interleaved conduction protection
Current - Output High(IOH)12A
Load TypeMOSFET

Descripción

Traducción por IA

The MCP14A1201/2 devices are high-speed MOSFET drivers that are capable of providing up to 12.0A of peak current while operating from a single 4.5V to 18V supply. There are two output configurations available; inverting (MCP14A1201) and noninverting (MCP14A1202). These devices feature low shootthrough current, fast rise and fall times, and matched propagation delays which make them ideal for high switching frequency applications. The MCP14A1201/2 family of devices offers enhanced control with Enable functionality. The active-high Enable pin can be driven low to drive the output of the MCP14A1201/2 low, regardless of the status of the Input pin. An integrated pull-up resistor allows the user to leave the Enable pin floating for standard operation. These devices are highly latch-up resistant under any condition within their power and voltage ratings. They can accept up to 500 mA of reverse current being forced back into their outputs without damage or logic upset. All terminals are fully protected against electrostatic discharge (ESD) up to 2 kV (HBM) and 200V (MM).

Características

Traducción por IA
  • High Peak Output Current: 12.0A (typical)
  • Wide Input Supply Voltage Operating Range: -4.5V to 18V
  • Low Shoot-Through/Cross-Conduction Current in Output Stage
  • High Capacitive Load Drive Capability: - 15,000 pF in 25 ns (typical)
  • Short Delay Times: 28 ns (tD1), 28 ns (tD2) (typical)
  • Low Supply Current: 360 μA (typical)
  • Low-Voltage Threshold Input and Enable with Hysteresis
  • Latch-Up Protected: Withstands 500 mA Reverse Current
  • Space-Saving Packages: - 8-Lead MSOP -8-Lead SOIC -8-Lead 2×3 TDFN

Aplicaciones

Traducción por IA
  • Switch Mode Power Supplies
  • Pulse Transformer Drive
  • Line Drivers
  • Level Translator
  • Motor and Solenoid Drive