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EDA ModelsEasyEDA
onsemi NSVT65010MW6T1G
| Manufacturer | |
| MPN | NSVT65010MW6T1G |
| LCSC Part # | C604388 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | TRANS PNP 65V 100mA SOT-363 |
| Datasheet | onsemi NSVT65010MW6T1G |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 15nA | |
| DC Current Gain | 150 | |
| Collector - Emitter Voltage VCEO | 65V | |
| Pd - Power Dissipation | 380mW | |
| Emitter-Base Voltage VEBO | 5V | |
| Transition frequency(fT) | 100MHz | |
| Vce Saturation(VCE(sat)) | 300mV | |
| type | PNP | |
| Number | 2 PNP | |
| Current - Collector(Ic) | 100mA | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 15nA | |
| DC Current Gain | 150 | |
| Collector - Emitter Voltage VCEO | 65V | |
| Pd - Power Dissipation | 380mW |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| Transition frequency(fT) | 100MHz | |
| Vce Saturation(VCE(sat)) | 300mV | |
| type | PNP | |
| Number | 2 PNP | |
| Current - Collector(Ic) | 100mA | |
| Operating Temperature | -55℃~+150℃ |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Complementary NPN equivalent NST65011MW6T1G is available.
Features
AI Translation
- Current Gain Matching to 10%
- Base−Emitter Voltage Matched to ≤2 mV
- Drop−In Replacement for Standard Device
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb −Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
AI Translation
- Current Mirrors
- Differential, Sense and Balanced Amplifiers
- Mixers
- Detectors and Limiters
In-Stock: 30
30 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5032 | $ 0.50 |
| 10+ | $ 0.4007 | $ 4.01 |
| 30+ | $ 0.3558 | $ 10.67 |
| 100+ | $ 0.3013 | $ 30.13 |
| 500+ | $ 0.2773 | $ 138.65 |
| 1,000+ | $ 0.2628 | $ 262.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 15nA | |
| DC Current Gain | 150 | |
| Collector - Emitter Voltage VCEO | 65V | |
| Pd - Power Dissipation | 380mW | |
| Emitter-Base Voltage VEBO | 5V | |
| Transition frequency(fT) | 100MHz | |
| Vce Saturation(VCE(sat)) | 300mV | |
| type | PNP | |
| Number | 2 PNP | |
| Current - Collector(Ic) | 100mA | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 15nA | |
| DC Current Gain | 150 | |
| Collector - Emitter Voltage VCEO | 65V | |
| Pd - Power Dissipation | 380mW |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| Transition frequency(fT) | 100MHz | |
| Vce Saturation(VCE(sat)) | 300mV | |
| type | PNP | |
| Number | 2 PNP | |
| Current - Collector(Ic) | 100mA | |
| Operating Temperature | -55℃~+150℃ |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Complementary NPN equivalent NST65011MW6T1G is available.
Features
AI Translation
- Current Gain Matching to 10%
- Base−Emitter Voltage Matched to ≤2 mV
- Drop−In Replacement for Standard Device
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb −Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
AI Translation
- Current Mirrors
- Differential, Sense and Balanced Amplifiers
- Mixers
- Detectors and Limiters
C604388 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NST65010MW6T1G | onsemi | SOT-363 | 150 | $ 0.365 | ||
| SBC856BDW1T1G | onsemi | SOT-363 | 20 | $ 0.1044 | ||
| LBC856BDW1T1G | LRC | SOT-363(SC-88) | 140 | $ 0.0321 | ||
| SBC856BDW1T3G | onsemi | SOT-363 | 5 | $ 0.1445 | ||
| BC856S | JSCJ | SOT-363 | 880 | $ 0.039 | ||
| BC856S(RANGE:110-475) | JSCJ | SOT-363 | 810 | $ 0.041 | ||
| AD-BC856S | JSCJ | SOT-363 | 600 | $ 0.0536 | ||
| BC856S | YANGJIE | SOT-363 | 40 | $ 0.0435 | ||
| BC856S | MSKSEMI | SOT-363 | 2,080 | $ 0.0372 | ||
| BC856DW | CBI | SOT-363 | 1,840 | $ 0.0359 |