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EDA ModelsEasyEDA
Infineon ISZ0901NLS
| Manufacturer | |
| MPN | ISZ0901NLS |
| LCSC Part # | C538465 |
| Packaging | TSDSON-8-EP(3.3x3.3) |
| Customer # | |
| Key Attributes | 2.1W 25V 40A 2V 6mΩ@10V 1 N-channel N-Channel TSDSON-8-EP(3.3x3.3) Single FETs, MOSFETs RoHS |
| Datasheet | Infineon ISZ0901NLS |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TSDSON-8-EP(3.3x3.3) | |
| Output Capacitance(Coss) | 290pF | |
| Pd - Power Dissipation | 2.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 9.1nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TSDSON-8-EP(3.3x3.3) | |
| Output Capacitance(Coss) | 290pF | |
| Pd - Power Dissipation | 2.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 40A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 9.1nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Optimized for charger applications
- Ultra-low QOSS for high-frequency switching power supplies
- Low FOMsw for high-frequency switching power supplies
- Excellent gate charge × RDS(on) figure of merit (FOM)
- Ultra-low on-resistance RDS(on) at VGS = 4.5 V
- 100% avalanche tested
- Superior thermal resistance performance
- N-channel
- Lead-free lead plating; RoHS compliant
- Halogen-free per IEC61249-2-21
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.6517 | $ 0.65 |
| 200+ | $ 0.2521 | $ 50.42 |
| 500+ | $ 0.2442 | $ 122.10 |
| 1,000+ | $ 0.2395 | $ 239.50 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TSDSON-8-EP(3.3x3.3) | |
| Output Capacitance(Coss) | 290pF | |
| Pd - Power Dissipation | 2.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 9.1nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TSDSON-8-EP(3.3x3.3) | |
| Output Capacitance(Coss) | 290pF | |
| Pd - Power Dissipation | 2.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 40A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 9.1nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Optimized for charger applications
- Ultra-low QOSS for high-frequency switching power supplies
- Low FOMsw for high-frequency switching power supplies
- Excellent gate charge × RDS(on) figure of merit (FOM)
- Ultra-low on-resistance RDS(on) at VGS = 4.5 V
- 100% avalanche tested
- Superior thermal resistance performance
- N-channel
- Lead-free lead plating; RoHS compliant
- Halogen-free per IEC61249-2-21
C538465 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| FH3050GS6 | XIN FEI HONG | Similar | PDFN3.3x3.3-8L | 4,460 | $ 0.1661 | ||
| CMSC36368 | Cmos | Similar | DFN-8(3.3x3.3) | 200 | $0.2027 $0.2133 | ||
| FH1404G6 | XIN FEI HONG | Similar | PDFN-8L(3.3x3.3) | 695 | $ 0.1857 | ||
| BSZ011NE2LS5I | Infineon | Similar | TSDSON-8(3.3x3.3) | 35 | $ 2.3526 | ||
| LWT4008AD3 | Lewa Micro | Similar | PDFN-8L(3.3x3.3) | 4,665 | $ 0.1781 |
5 more alternative parts.View all substitutes